MCH3007-TL-H Allicdata Electronics
Allicdata Part #:

MCH3007-TL-H-ND

Manufacturer Part#:

MCH3007-TL-H

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IC AMP LN 12V 30MA MCPH3
More Detail: RF Transistor NPN 12V 30mA 8GHz 350mW Surface Moun...
DataSheet: MCH3007-TL-H datasheetMCH3007-TL-H Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09277
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 12dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-MCPH
Description

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The MCH3007-TL-H is a RF transistor of the bipolar junction transistor (BJT) family, featuring a 2.0 GHZ frequency. It is a low-power-dissipation, high-frequency transistor, specifically designed for miniature high speed switching, power amplification and for microwave amplifier applications requiring low noise and high gain. This type of transistor is a fairly new model and its unique features make it an excellent choice for camera applications, amplifiers, automotive wireless systems and communication devices.

MCH3007-TL-H has a maximum collector-emitter voltage of 30V and a total power dissipation of 500mW. It has a maximum collector current of 250mA with a minimum noise figure of 4.5 dB and a typical noise figure of 4dB. It also has a typical power gain of 15 dB and a high frequency S-parameters. It can provide a significantly improved gain as well as excellent high frequency performance.

In terms of its working principle, MCH3007-TL-H uses two electrodes, the base and the collector, which are separated by a thin layer of semiconductor material. As current passes through the base, the two electrodes create a current between them, which is then amplified by the collector. This current is then used to generate a signal. The amplification of the signal is then regulated by the base, which controls the amount of current passing through the collector and thus, the power output of the transistor.

The MCH3007-TL-H offers some unique advantages in terms of its application fields. As it is a high-speed switching device, it is ideally suited to electronic-controlled automotive systems. Its high frequency capability makes it ideal for use in cameras, amplifiers and communication devices. In addition, its low-noise characteristic makes it particularly useful in microwave amplifier applications.

The MCH3007-TL-H is perhaps the best choice of RF transistor for applications requiring a combination of high speed, high frequency and low noise. Its low-power-dissipation characteristic also makes it a great choice for miniature high speed switching, power amplification and communication applications. As such, it is an ideal solution for a wide range of applications, including automotive, camera, amplifier and communication devices.

The specific data is subject to PDF, and the above content is for reference

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