MCH3914-8-TL-H Allicdata Electronics

MCH3914-8-TL-H Discrete Semiconductor Products

Allicdata Part #:

MCH3914-8-TL-HOSTR-ND

Manufacturer Part#:

MCH3914-8-TL-H

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 50MA 300MW MCPH3
More Detail: JFET N-Channel 50mA 300mW Surface Mount 3-MCPH
DataSheet: MCH3914-8-TL-H datasheetMCH3914-8-TL-H Datasheet/PDF
Quantity: 1000
3000 +: $ 0.21011
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 10µA
Input Capacitance (Ciss) (Max) @ Vds: 4.9pF @ 5V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCPH
Description

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Transistors - JFETs

The MCH3914-8-TL-H is a junction field-effect transistor (JFET) type of transistor used in various circuits. JFETs are three-terminal devices used in many applications including amplifiers, mixers, oscillators, switches and sensor circuits. They are known for their low-noise characteristics and cost effective designs.

Application Field

The MCH3914-8-TL-H is a JFET type transistor used in a variety of applications. The most common applications include:

  • Amplifiers
  • Mixers
  • Oscillators
  • Switches
  • Sensor circuits

The MCH3914-8-TL-H can also be used in a variety of other applications, including transistor-transistor logic (TTL) circuits. In TTL circuits, the MCH3914-8-TL-H can be used to control the switching on and off of transistors for the desired purpose.

Working Principle

The working principle of the MCH3914-8-TL-H transistor is the same as any other JFET transistor device. The operation is based on the JFET\'s unique advantage of having no Gate current needed to control the flow of electrons from the Source to the Drain. This is because JFETs do not have a collector like bipolar junction transistors (BJTs) do. Instead, the Gate is completely insulated from the two other terminals (Source and Drain) and the current is controlled by applying an electric field onto a "depletion" layer which is located at the junction of the three terminals.

When a negative voltage is applied to the Gate of the JFET, the electric field will reduce the electrons in the depletion layer, decreasing the current flow from the Source to the Drain. Similarly, when a positive voltage is applied, the electric field will increase the electrons in the depletion layer, resulting in an increase in current flow.

Conclusion

The MCH3914-8-TL-H is a JFET type device with many applications, such as in amplifiers, mixers, oscillators, switches and sensor circuits. The working principle of a JFET is based on the ability to control the flow of electrons from the Source to the Drain using an electric field which is applied on the Gate. The MCH3914-8-TL-H is a cost-effective and low-noise solution for many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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