Allicdata Part #: | MCH3481-TL-H-ND |
Manufacturer Part#: |
MCH3481-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 2A MCPH3 |
More Detail: | N-Channel 20V 2A (Ta) 800mW (Ta) Surface Mount SC-... |
DataSheet: | MCH3481-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | SC-70FL/MCPH3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 800mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 175pF @ 10V |
Vgs (Max): | ±9V |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 104 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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MCH3481-TL-H Application Field and Working Principle
MCH3481-TL-H is one of the many types of field-effect transistors (FETs) available today, specifically grouped as single metal-oxide-semiconductor field-effect transistors (MOSFETs). This type of transistor is predominantly used in the field of electronics and engineering, particularly in devices that require low-power and high-speed control.
The MCH3481-TL-H MOSFET is an N-channel device, meaning that current between the source and drain terminals is conducted by negative charge carriers, or electrons. This type of transistor is used in several systesm, including power supply switching applications and high-frequency switching for cellular phones, laptops and other portable devices. They are also useful for pulse-width modulation (PWM) applications.
The working principle of the MCH3481-TL-H MOSFET is relatively simple. It is made up of two p-type and one n-type layers. The p region is known as the bulk, and the n region is called the channel. When a voltage is applied to the gate terminal, this creates an electric field which causes mobile electrons from the bulk to migrate to the channel and the switch is on. When the voltage is removed, the electrons are repelled back to the bulk and the switch is off.
Other important factors in the working of the MCH3481-TL-H MOSFET is the gate threshold voltage. This is the voltage which is necessary to create the required electric field to allow electrons to flow. This threshold voltage can range from around 4V to 10V depending on the specific type of devices. Also, the size of the gate oxide is important as this has an effect on the switching speed of the transistor. Generally, the larger the gate oxide, the faster the switching speed.
The combination of the features of the MCH3481-TL-H make it a popular choice for use in a range of computer and electronics applications. This type of FET can be used to create efficient systems which have low power consumption and are fast operation. The device is also simple to use and is widely available, making it one of the preferred choices for engineers and hobbyists.
The specific data is subject to PDF, and the above content is for reference
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