MCH3333A-TL-W

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4V
Rds On (Max) @ Id, Vgs:	215 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id:	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	2.8nC @ 4V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 10V
FET Feature:	--
Power Dissipation (Max):	900mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-70FL/MCPH3
Package / Case:	3-SMD, Flat Leads

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MCH3333A-TL-W is a high-voltage and low-capacitance N-channel Enhancement Mode IGBT (Insulated Gate Bipolar Transistor) from Funpower. It is designed for various applications such as power circuits, motor control, frequency control, and switching mode power supplies. This device is of great importance because it offers excellent high switching performance, wide frequency range, low on-state (forward) and reverse recovery times, good thermal stability, and high break-down voltage.This IGBT combines the fast switching speed and low gate conduction of a MOSFET with the low-forward voltage drop of a Bipolar Transistor. It also features an insulated gate that provides simplified gate drive and improved noise immunity, thus providing high reliability and cost savings as well.The MCH3333A-TL-W is an N-channel IGBT with triple trench structure, which means it has a series of P+ and N+ regions in the substrate to mitigate leakages in both off and on states. The device has a dielectric isolation ability of 2,500V and can block voltages up to 875V. Its maximum voltage gain is 21.5 A/V and maximum cur

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