MCH3333A-TL-W

Vgs(th) (Max) @ Id:	1.3V @ 1mA
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	SC-70FL/MCPH3
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	900mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	240pF @ 10V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	2.8nC @ 4V
Series:	--
Rds On (Max) @ Id, Vgs:	215 mOhm @ 1A, 4V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4V
Current - Continuous Drain (Id) @ 25°C:	2A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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MCH3333A-TL-W is a high-voltage and low-capacitance N-channel Enhancement Mode IGBT (Insulated Gate Bipolar Transistor) from Funpower. It is designed for various applications such as power circuits, motor control, frequency control, and switching mode power supplies. This device is of great importance because it offers excellent high switching performance, wide frequency range, low on-state (forward) and reverse recovery times, good thermal stability, and high break-down voltage.This IGBT combines the fast switching speed and low gate conduction of a MOSFET with the low-forward voltage drop of a Bipolar Transistor. It also features an insulated gate that provides simplified gate drive and improved noise immunity, thus providing high reliability and cost savings as well.The MCH3333A-TL-W is an N-channel IGBT with triple trench structure, which means it has a series of P+ and N+ regions in the substrate to mitigate leakages in both off and on states. The device has a dielectric isolation ability of 2,500V and can block voltages up to 875V. Its maximum voltage gain is 21.5 A/V and maximum cur

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