MCR8DSMT4G Allicdata Electronics
Allicdata Part #:

MCR8DSMT4GOSTR-ND

Manufacturer Part#:

MCR8DSMT4G

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: THYRISTOR SCR 8A 600V DPAK
More Detail: SCR 600V 8A Sensitive Gate Surface Mount DPAK
DataSheet: MCR8DSMT4G datasheetMCR8DSMT4G Datasheet/PDF
Quantity: 2500
2500 +: $ 0.22826
5000 +: $ 0.21685
12500 +: $ 0.20869
25000 +: $ 0.20217
Stock 2500Can Ship Immediately
$ 0.25
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Off State: 600V
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 200µA
Voltage - On State (Vtm) (Max): 1.8V
Current - On State (It (AV)) (Max): 5.1A
Current - On State (It (RMS)) (Max): 8A
Current - Hold (Ih) (Max): 6mA
Current - Off State (Max): 10µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A @ 60Hz
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MCR8
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thyristors - SCRs are a class of semiconductor power devices that are used to control large amounts of electric current. The MCR8DSMT4G is a SiC (Silicon Carbide) Thyristor SCR module that can be used in applications ranging from motor drives, motor control, power grids and other high-power applications. The MCR8DSMT4G module is designed to provide a high level of reliability, efficiency and cost savings.

The thyristor SCR is a four-layer semiconductor device that has three electrodes: gate, anode and cathode. The SCR can be turned on and off by applying a gate signal to the gate electrode. When the gate voltage reaches a certain level, it triggers the SCR to conduct by allowing current to flow between the anode and cathode electrodes. The control of the current is through the gate voltage and the current is determined by the anode-cathode voltage.

In the MCR8DSMT4G module, the SiC material is used as the base material to create the four layer SCR structure. The base material is known for its ability to handle large voltages and currents with low losses, and its fast switching speed allows a high performance switching action. The MCR8DSMT4G module also features built-in self-protection circuitry to protect against short circuit and overcurrent conditions.

The application field of the MCR8DSMT4G is mainly motor control, power grids and other high-power applications. The MCR8DSMT4G module can be used in HVAC systems, solar energy applications, electric vehicle charging stations, and other heavy industrial applications. It is also used in consumer electronics, such as home appliances, consumer entertainment systems, and other consumer products.

The working principle of the MCR8DSMT4G is based on the four-layer structure of the SCR. When a gate voltage of the right magnitude is applied to the gate electrode, it triggers the SCR to conduct by allowing current to flow between the anode and cathode electrodes. This current flow can be controlled by adjusting the magnitude of the gate voltage. Additionally, the MCR8DSMT4G module is equipped with self-protection circuitry that shuts down the SCR when overcurrent or short circuit conditions are detected.

In summary, the MCR8DSMT4G module is a Silicon Carbide Thyristor SCR module designed for high-current applications such as motor control, power grids and other high power applications. The MCR8DSMT4G module is equipped with a four-layer SiC structure for fast switching action and self-protection circuitry to protect against short circuit and overcurrent conditions. Its fast switching speed, high current handling and reliability make it a popular choice for motor control and power grid applications.

The specific data is subject to PDF, and the above content is for reference

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