MG17200D-BN4MM

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The MG17200D-BN4MM, or M17200D-BN4MM, is a transistor module from Mitsubishi. This module is designed for use in low-voltage, high-current applications and is capable of providing up to 650A at 125V. This module is commonly used in motor drives, industrial automation, power supplies, and other applications where high power levels are needed. With its many features and benefits, this module is well-suited to high-power applications.

The MG17200D-BN4MM is an insulated-gate bipolar transistor (IGBT) module. IGBTs are power transistors that use a combination of metal oxide field effect transistors (MOSFETs) and bipolar junction transistors (BJT) to achieve higher-efficiency power conversions. The metal oxide field effect transistors allow more current to flow and the bipolar junction transistors provide better switching and higher power levels. By combining both technologies, the MG17200D-BN4MM is capable of operating at higher temperatures and has higher power capabilities than an N-channel MOSFET.

The MG17200D-BN4MM is designed for use in applications that require high current levels. Its MOSFET and BJT design allow for a high current rating that is capable of providing up to 650A at 125V. This makes it ideal for applications such as motor drives, servo motors, and inverters. Additionally, this module is designed to handle switching frequencies up to 20kHz, making it suitable for various industrial automation applications as well.

The MG17200D-BN4MM also features a built-in commutation circuit which helps to reduce losses associated with current reversal. This is accomplished by controlling the commutation of the IGBTs in the module. Additionally, the MG17200D-BN4MM features a built-in heat sink which helps to dissipate excess heat generated during operation. This helps to ensure the module operates at its optimal performance levels. Furthermore, the MG17200D-BN4MM has a built-in overcurrent limiting circuit which helps to protect the device from overloading.

The MG17200D-BN4MM also features an integrated bottom-side cooling feature which helps to ensure lower junction temperatures. This is accomplished by drawing heat away from the module’s hot spots and releasing it through the bottom of the device. Additionally, the MG17200D-BN4MM features a built-in temperature sensor which can be used to monitor the module’s temperature and take corrective action if necessary. This ensures the module operates within its safe temperature limits.

In summary, the MG17200D-BN4MM is designed for use in applications requiring high current levels. This module is an IGBT module that uses a combination of MOSFETs and bipolar junction transistors to provide higher efficiency power conversion. This module is capable of providing up to 650A at 125V, making it ideal for motor drives, industrial automation, power supplies, and other applications that require high power levels. Additionally, this module features a built-in commutation circuit, heat sink, overcurrent limiting circuit, and temperature sensor, all of which help to ensure the module operates at its optimal level. The MG17200D-BN4MM is the ideal solution for applications requiring high current levels.

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