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MG17300WB-BN4MM application field and working principle

MG17300WB-BN4MM is an insulated gate bipolar transistor (IGBT) module which is suitable for applications requiring high power, high switching frequency, high power density and high operating temperature. It has wide range of application areas such as motor drives, UPS, welding and induction heating systems, industrial robots and plasma cutting.

Overview

The MG17300WB-BN4MM is an insulated gate bipolar transistor (IGBT) module, combining two IGBTs with an anti-parallel reverse conducting diode (RCD) in one package. The IGBTs have high power and switching speed and offer improved efficiency and controllability. It is designed for high current, high-temperature applications and comes with a ceramic cover for protection from heat and high voltage.

Advantages

The MG17300WB-BN4MM is a powerful, high-performance IGBT module which offers many advantages. It has good static and dynamic characteristics with low turn-on losses and switching frequencies of up to 20kHz. It also provides high power density, high-temperature operation, soft commutation of the current path, and excellent thermal insulation. It is also very reliable and rugged, with a high temperature operating range of up to 175°C.

Working principle

The MG17300WB-BN4MM is an integrated IGBT module. It is made up of two IGBTs and an anti-parallel RCD. The two IGBTs are used as switches to control the power switching in the power electronics device. The IGBT\'s collector is connected directly to the control gate and the emitter terminal of both transistors are connected to each other, acting as the common base of the two transistors. The reverse conducting diode of the IGBT module absorbs the inductive current generated by the switching action of the two IGBTs.

When a voltage is applied to the gate of the IGBT, the electrons are attracted to the emitter and the collector. As more electrons are attracted to the collector, the current starts to increase in the IGBT and the collector-emitter voltage decreases until it reaches zero. At this point, the IGBT is said to be "on" and the current can flow through the collector-emitter path of the IGBT. When the current flow is interrupted, either by the removal of the gate voltage or by the application of a negative voltage, the reverse conducting diode provides a conduction path for the stored inductive energy.

Applications

The MG17300WB-BN4MM IGBT module is highly effective for applications requiring high power and high frequency. It is suitable for various applications such as motor drives, UPS, welding and induction heating systems, industrial robots and plasma cutting. Furthermore, it can be used in battery chargers, automotive power generators, SMPS, motor drives and inverters, as well as in medical and lighting equipment.

Conclusion

The MG17300WB-BN4MM is a high power and high frequency IGBT module with high power density, soft commutation of the current path, excellent thermal insulation and a high temperature operating range of up to 175°C. It has many applications in motor drives, UPS, welding and induction heating systems, industrial robots and plasma cutting.

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