MG17300D-BN4MM Allicdata Electronics
Allicdata Part #:

MG17300D-BN4MM-ND

Manufacturer Part#:

MG17300D-BN4MM

Price: $ 157.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Littelfuse Inc.
Short Description: IGBT MOD 1700V 300A PKG D CRCT:B
More Detail: IGBT Module Trench Field Stop Half Bridge 1700V 40...
DataSheet: MG17300D-BN4MM datasheetMG17300D-BN4MM Datasheet/PDF
Quantity: 1000
60 +: $ 142.86200
Stock 1000Can Ship Immediately
$ 157.16
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 400A
Power - Max: 1450W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 27nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3
Description

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MG17300D-BN4MM is a type of insulated gate bipolar transistor (IGBT) module. It is used primarily in power switches, stationary motors, and many other applications requiring transistor-controlled power signals. The technology has enabled the creation of modules capable of switching signals of up to 3000A, which is an order of magnitude larger than is achievable using standard IGBTs. This article will discuss the application fields of MG17300D-BN4MM, as well as its working principle.

Application Fields

The MG17300D-BN4MM is designed primarily as a replacement for thyristors and standard IGBTs. It offers increased power density, as well as faster switching times. As such, it is used in a variety of applications where the devices must be able to quickly switch high-current power signals. Some of the primary applications include:

  • Motor control systems
  • Solar panel inverters
  • Uninterruptible power supplies (UPS) systems
  • Alternative energy sources such as wind and tidal energy
  • Electric and hybrid vehicles
  • Aerospace and military systems

In these applications, the MG17300D-BN4MM provides superior performance over standard IGBTs, allowing for efficient and reliable operation even in demanding environments.

Working Principle

The MG17300D-BN4MM is an insulated gate bipolar transistor (IGBT) module, which combines the fast switching speeds of an IGBT with the superior current-carrying capability of a MOSFET. The IGBT is created by sandwiching a P-channel MOSFET and an N-channel MOSFET together. The P-channel MOSFET is then connected to a gate terminal and the N-channel MOSFET is connected to a collector terminal. When a positive voltage is applied to the gate terminal, it drives the gate-source voltage of both transistors to the same voltage, creating an on-state in the IGBT module.

As current flows through the module, the transistors act as a voltage level shifter, redistributing the energy to the collector terminal. The resulting voltage drop between the gate and collector terminals of the module allows for greater control of the current flowing through it. This makes the MG17300D-BN4MM particularly useful in switching high-current power signals, as it can quickly and accurately control the current levels.

Conclusion

The MG17300D-BN4MM is a type of insulated gate bipolar transistor (IGBT) module that is increasingly being used in many applications requiring high-power switching. It combines the fast switching speeds of an IGBT with the superior current-carrying capability of a MOSFET, allowing it to quickly and accurately control high-current power signals. It is used primarily in motor control systems, uninterruptible power supplies, electric and hybrid vehicles, and many other applications where precise control of power signals is required.

The specific data is subject to PDF, and the above content is for reference

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