Allicdata Part #: | MG1750S-BN4MM-ND |
Manufacturer Part#: |
MG1750S-BN4MM |
Price: | $ 46.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | IGBT MOD 1700V 50A PKG S CRCT:B |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1700V 75... |
DataSheet: | MG1750S-BN4MM Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 41.83500 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 320W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 50A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 4.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | S-3 Module |
Supplier Device Package: | S3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MG1750S-BN4MM module is one of the most popular transistors available in the market today. It is classified as an insulated-gate bipolar transistor (IGBT) module which has two main applications: power discharging and power inverters. The MG1750S-BN4MM is an efficient and reliable transistor that is suitable for a wide range of power applications.
The IGBT module consists of an N-channel insulated-gate bipolar transistor (IGBT) combined with a diode. It has a small on-resistance that provides a high switching frequency and low conduction losses. The IGBT module is usually driven by a high-efficiency PWM controller.
The IGBT module is used in applications such as power supplies, motor drives, high power switching, and power converters. It is also suitable for controlling high power electronics, such as power MOSFETs, thyristors and power rectifiers. The MG1750S-BN4MM module is also used in the automotive industry, particularly in automotive power electronics.
The MG1750S-BN4MM module has several advantages compared to other transistors. It has a low on-resistance which results in better efficiency. Additionally, it has a low saturation voltage, making it suitable for low-voltage applications. Finally, it has a low switching loss, which results in less heat dissipation.
The working principle of the MG1750S-BN4MM module is based on a three-stage process. First, it converts the input signal (VIN) into two signals, one in the form of AC current (Vout1) and the other in the form of AC voltage (Vout2). Second, the AC voltage signal is amplified by an operational amplifier (opamp) to generate a sufficient voltage to power the IGBT transistor. Third, the output AC current is then rectified by the diode to generate a DC signal which can be used to drive the load.
The MG1750S-BN4MM module is an effective solution for a wide range of power electronics applications. It offers low on-resistance, a low switching frequency, and low conduction losses, making it a reliable and efficient option. Furthermore, it requires low power to operate which makes it ideal for low-voltage applications. The MG1750S-BN4MM module is also suitable for automotive applications since it has a low saturation voltage.
The specific data is subject to PDF, and the above content is for reference
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