MG17225WB-BN4MM

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MG17225WB-BN4MM is a high performance Insulated Gate Bipolar Transistor (IGBT) module, which is available in a rugged and reliable single module package that delivers superior power density for high power applications. This IGBT module is designed for high frequency, low voltage power semiconductor applications and the combination of power, thermal performance and maintainability makes it ideal for many industrial applications.

Application Field

The MG17225WB-BN4MM is designed for a variety of different applications, including motor control, energy/electricity drives, switching power modules, power conversion, HV/UV semiconductor devices, lighting, and solar energy systems. Additionally, this IGBT module can be used in a variety of power electronic circuits such as bridge inverters, DC-DC converters, SCR and TRIAC applications, as well as automotive, military, and aviation applications.

Working Principle

The MG17225WB-BN4MM is a three-terminal device, featuring two insulated gate electrodes and a single junction base. The gate of the module is designed to control the conduction of the main current across the IGBT junction. When a positive gate bias voltage is applied, current is allowed to flow from the collector to emitter and the IGBT is ‘on’. When the gate control voltage is removed, the IGBT switches off, preventing current conduction across the junction. The MG17225WB-BN4MM has an integrated (U-N) driver circuit to facilitate easy connection to the gate of the IGBT module.

The MG17225WB-BN4MM can be operated in both forward and reverse conduction. In forward conduction the positive gate bias voltage is greater than the device’s threshold voltage, allowing current to flow across the junction. Conversely, in reverse conduction, the negative gate bias voltage is greater than the device’s threshold voltage and current travels in the opposite direction, from the emitter to collector. This IGBT module also features temperature compensation and gate drive power limitation functions to provide protection against over-temperature and over-current conditions.

The MG17225WB-BN4MM module is designed for high frequency, low voltage power applications such as bridge inverters, DC-DC converters, and SCR and TRIAC applications. The module also offers integrated protection functions, such as temperature compensation and gate drive power limitation. This IGBT module, combined with its rugged and reliable single module package, delivers superior power density and high performance in a variety of industrial applications.

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