MIC4123YME-TR

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PMIC - Gate Drivers include circuits and systems that lead the gate voltage of a MOSFET or IGBT, as they are considered key components in power management systems. The MIC4123YME-TR is a high-performance, low-side gate driver that provides strength to the power MOSFET gate switches. This article will discuss the application field and working principle of the MIC4123YME-TR.

Features

The MIC4123YME-TR has a wide range of features that make it suitable for many applications. Features include:

• Operates from 3.0 V to 5.5 V, so it can be used in both single supply and dual supply applications.
• High peak current capability of up to 4 A, enabling the gate drivers to switch larger devices than smaller drivers.
• Low output impedance of 0.2 Ω, resulting in faster device turn-off.
• 600 KHz switching frequency, allowing the drivers to keep up with the demands of higher-speed processors.
• Undervoltage lock-out (UVLO) prevents the device from operating below a predetermined threshold, increasing circuit reliability.

Application Field

The MIC4123YME-TR is designed to drive small to medium-sized power MOSFETs in a wide range of applications. It is particularly suitable for switched-mode power supplies, DC/DC and DC/AC converters, motor drivers, and EMI suppression circuits. The high speed capability and low output impedance also make it suitable for high-frequency switching and switching regulator designs.

Working Principle

The MIC4123YME-TR is an integrated, low-side gate driver designed to drive a wide range of power MOSFETs and IGBTs. The device consists of two stages. The first stage consists of an internal amplifier and a gate driver with active clamp, while the second stage consists of a Darlington transistor. The Darlington transistor is capable of supplying the gate drive current needed to switch the power MOSFET or IGBT.

The MIC4123YME-TR operates in one of two modes: active or standby. In active mode, the device provides a constant gate drive current, determined by the external sense resistor and the device’s internal gain. This allows the user to precisely control the voltage at the power device’s gate. In standby mode, the device will be disabled and no gate current will be supplied, allowing the user to reduce power consumption in idle. The device is enabled by an external control signal, allowing the user to switch the device on and off as needed.

When a suitable control signal is applied to the MIC4123YME-TR, it will drive the gate voltage of the power device up to its maximum. When the control signal is removed, the device will quickly reduce the gate voltage to its minimum, effectively turning off the power device. The device is protected against over-current and over-temperature conditions, ensuring reliable operation.

Conclusion

The MIC4123YME-TR is a high-performance, low-side gate driver that provides the strength necessary to drive many power MOSFET switches. With its wide range of features, it is suitable for a variety of applications, from switched-mode power supplies and motor drivers to EMI suppression circuits. The device is powered by an external voltage supply and is protected from over-current and over-temperature conditions. It is an ideal choice for use in high power applications.

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