
Allicdata Part #: | MIC4425CWMTR-ND |
Manufacturer Part#: |
MIC4425CWM TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC DRIVER MOSFET 3A DUAL 16-SOIC |
More Detail: | Low-Side Gate Driver IC Inverting, Non-Inverting 1... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Logic Voltage - VIL, VIH: | 0.8V, 2.4V |
Base Part Number: | MIC4425 |
Supplier Device Package: | 16-SOIC |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 28ns, 32ns |
Input Type: | Inverting, Non-Inverting |
Current - Peak Output (Source, Sink): | 3A, 3A |
Series: | -- |
Voltage - Supply: | 4.5 V ~ 18 V |
Gate Type: | N-Channel, P-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Low-Side |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The MIC4425CWM TR is a monolithic high-voltage gate driver designed to drive power MOSFETs in power conversion applications such as motor control, power supplies and measurement equipment. The MIC4425CWM TR is a highly sophisticated and reliable gate driver that is suitable for a wide variety of low voltage and high voltage applications, and is capable of driving MOSFETs with up to 500V gate voltage.The MIC4425CWM TR gate driver is a current-mode drive with an optimized power stage design that allows for higher efficiency and improved thermal performance. The IC has an internal, on-chip level-shift circuitry that allows the MOSFET gate to be driven from a low impedance source, thus improving the switching performance of the power stage. The MIC4425CWM TR features an on-chip, high-current totem-pole driver with a max peak output current of 12A. This powerful driver allows the MOSFET gate to be driven with a high switching speed, reducing switching losses while allowing the device to be operated at higher frequencies. The internal power stage design of the MIC4425CWM TR allows the gate to be driven with an adjustable drive current, which can be set via an external resistor. The MIC4425CWM TR includes an integrated protection mechanism that prevents current-induced latch-up and thermal over-stress of sensitive components. The MIC4425CWM TR also features an on-chip high isolating amplifier that provides excellent voltage isolation between the input and output pins, allowing the device to safely drive MOSFETs without the risk of creating a short circuit between high-voltage components.The MIC4425CWM TR is designed to be flexible and can be used in a variety of applications, including high-voltage motor control, power supplies and measurement equipment. The MIC4425CWM TR also has the ability to drive MOSFETs with up to 500V gate voltage, making it an ideal solution for high-voltage applications. The MIC4425CWM TR is a monolithic high-voltage gate driver designed for use in low voltage and high voltage application and features an on-chip level-shift circuitry that allows for higher efficiency and improved thermal performance. The on-chip totem-pole driver enables high switching speed and the adjustable drive current allows for the device to be operated in a wide range of applications. The MIC4425CWM TR also features an integrated protection mechanism to prevent current-induced latch-up and thermal over-stress of sensitive components and an on-chip high isolating amplifier for excellent voltage isolation. In conclusion, the MIC4425CWM TR is a high-voltage gate driver capable of driving MOSFETs with up to 500V gate voltage. The device is designed to be flexible and is suitable for a wide variety of low voltage and high voltage applications, such as motor control, power supplies and measurement equipment. The internal power stage design and on-chip level-shift circuitry allow for higher efficiency and improved thermal performance, while the on-chip totem-pole driver enables high switching speed and adjustable drive current. The integrated protection mechanism helps to protect sensitive components from current-induced latch-up and thermal over-stress.
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