MIC4428BMM-TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MIC4428BMM-TR is a high-side MOSFET/IGBT gate driver that can be used in various high-power applications. It is a dual channel device, with one channel dedicated to driving N-channel MOSFETs and the other specifically designed to drive IGBTs. The MIC4428BMM-TR is part of the \'Power Management Integrated Circuit\' (PMIC) family, and more specifically falls into the category of Gate Drivers. This type of device is designed to control the gate voltage of an N-channel MOSFET or IGBT, which in turn controls the flow of current in an electronic circuit. Gate drivers will ensure that the correct gate voltage is being applied to the MOSFET/IGBT and that the output is switched between Vin and ground in a precisely timed manner.

The MIC4428BMM-TR is designed to operate from a single +5V supply, and features input logic thresholds from 1.55V to 5.5V, enabling it to be used with various logic and processor families. It is configured to drive the power MOSFET and/or IGBT in opposite direction, meaning that a high side MOSFET/IGBT can be driven using just two gate drive channels. This makes the MIC4428BMM-TR ideal for motor drive, power converter, and solar panel applications.

The MIC4428BMM-TR is capable of delivering up to 1.5A continuous and 3A pulsed peak output current, with a total output slew rate of 2.2V/ns. It features an enable pin, logic level inputs, over-protection circuits as well as thermal warning/shutdown pins. It also features over-current protection for the high-side and low-side drivers.

The MIC4428BMM-TR is available in a 16-lead SOIC package, which facilitates optimal performance for small design applications. It has an operating temperature range of -40°C to 125°C, and a maximum operating junction temperature of 155°C, making it suitable for a wide range of high current industrial applications.

In summary, the MIC4428BMM-TR is a high-power device that is suitable for a variety of industrial applications including motor drives, power converters and solar power. Its dual channel design can drive both N-channel MOSFETs and IGBTs, while its high-current outputs and protection circuits make it a robust and reliable device.

The specific data is subject to PDF, and the above content is for reference