MIC4469YWM Allicdata Electronics
Allicdata Part #:

576-1215-ND

Manufacturer Part#:

MIC4469YWM

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC DRIVER MOSF QUAD 1.2A 16SOIC
More Detail: Low-Side Gate Driver IC Inverting, Non-Inverting 1...
DataSheet: MIC4469YWM datasheetMIC4469YWM Datasheet/PDF
Quantity: 977
Stock 977Can Ship Immediately
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Base Part Number: MIC4469
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Rise / Fall Time (Typ): 14ns, 13ns
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 1.2A, 1.2A
Series: --
Voltage - Supply: 4.5 V ~ 18 V
Gate Type: N-Channel, P-Channel MOSFET
Number of Drivers: 4
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tube 
Description

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MIC4469YWM, developed by Microchip Technology, is a high power gate driver; it is a member of their High-Side/Low-Side Gate Drivers family. The device has been specifically designed to support demanding applications in both industrial and automotive markets.

The MIC4469YWM is packaged in a thermally enhanced 5mm × 5mm QFN package, which provides effective power delivery and thermal performance to minimize losses. The device is capable of driving N-channel MOSFETs, which is ideal for high-side/low-side power switch applications.

The MIC4469YWM features a variety of useful features, such as an adjustable deadtime, adjustable slope compensation, adjustable gate driver output, over-voltage and over-temperature protection, and a fault detection output. This makes it suitable for a wide range of applications, from modulating MOSFETs in boost converters to driving N-channel MOSFETs in synchronous rectification and dual-mode switching applications.

The device is designed to be simple to use, featuring adjustable deadtime via an external resistor (RDT), and adjustable which allows for control of the slope of the drive voltage. The MIC4469YWM is capable of driving high side and low-side N-channel MOSFETs over a wide operating temperature range. It also includes thermal shutdown, fault detection and over-voltage protection.

In terms of working principles, the MIC4469YWM integrates two power stages: a high-side drivers and a low-side drivers. The high-side driver provides an adjustable positive voltage at the gate of the FET, while the low-side driver provides an adjustable negative voltage. The adjustable deadtime feature allows for optimal MOSFET switching behavior and usually works to match the on-resistance of the low-side FET. The adjustable slope compensation adds switching performance to the FETs, and ensures that the slew rate of the FETs is within acceptable limits.

The device also features a fault detection output (VDSS) which is activated whenever a fault is detected. This output can be configured to indicate either a high side or low side MOSFET fault. It also has an over-voltage and over-temperature protection in order to safely monitor the system’s operating temperature and voltages.

The MIC4469YWM is an ideal device for driving high power FETs in a variety of applications. Because it is packaged in a thermally enhanced 5mm × 5mm QFN package, it is well suited for high power applications. With its adjustable deadtime and adjustable slope compensation, it can be used to control FET switching behavior and provide optimal operation. It also features fault detection, over-voltage and over-temperature protection, which allow it to safely monitor the system’s operation.

The specific data is subject to PDF, and the above content is for reference

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