MIC4807BN Allicdata Electronics
Allicdata Part #:

MIC4807BN-ND

Manufacturer Part#:

MIC4807BN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC DRIVER 80V 8CH ADDRESS 18-DIP
More Detail: Low-Side Gate Driver IC Non-Inverting 18-DIP
DataSheet: MIC4807BN datasheetMIC4807BN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2V
Base Part Number: MIC4807
Supplier Device Package: 18-DIP
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): --
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): --
Series: --
Voltage - Supply: 4.5 V ~ 16 V
Gate Type: N-Channel MOSFET
Number of Drivers: 8
Channel Type: Synchronous
Driven Configuration: Low-Side
Part Status: Obsolete
Packaging: Tube 
Description

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Power Management Integrated Circuits (PMICs) have long been used in electronics to handle the power management in a variety of applications. These devices are helpful for controlling the power in many different situations, such as for energy savings. Gate drivers are a classification of PMICs that are specifically designed to manage power in gate circuits, such as those found in FETs and IGBTs. One example of a gate driver PMIC is the MIC4807BN.

What is MIC4807BN?

The MIC4807BN is a 350V, high- efficiency gate driver PMIC that is capable of driving large IGBTs, MOSFETs, or Silicon Carbide (SiC) FETs. It is a single-channel, isolated voltage shift driver with a single-ended or push-pull output stage. This device is capable of operating from a wide input voltage range of 2.5V to 6V and offers very low quiescent and standby currents. The MIC4807BN also features a wide range of protection features such as thermal shutdown, over-voltage and under-voltage protection, and short-circuit protection.

MIC4807BN Application Fields

The MIC4807BN is a versatile and reliable integrated gate driver. Due to its excellent performance characteristics and wide input and output voltage ranges, it is suitable for many different applications. It can be used in power converters, battery chargers, power supplies, motor control, consumer electronics, and automotive applications. This device is suitable for driving large IGBTs, MOSFETs, and SiC FETs, which makes it ideal for use in solar inverters, DC-DC converters, power supplies, motor control systems, consumer electronics, and automotive applications.

MIC4807BN Working Principle

The MIC4807BN is an isolated gate driver that enables a wide range of gate drive requirements to be met. It has an integrated start-up current source, switchable symmetrical or asymmetrical gate drive outputs, fault monitoring, and a wide range of protection features. The gate drive voltage is generated by a proprietary voltage shift technique, which consists of a single stage bootstrap clamp for the positive output and a buried zener diode for the negative output. This output voltage solution provides protection against over-voltage and under-voltage conditions. The gate driver is configured to achieve the most optimal compatibility between with the device it is driving and its own features, such as maximum efficiency, fast rise and fall times, short-circuit current limitation, over-voltage protection, and thermal shutdown. The MIC4807BN has the ability to operate from a wide input voltage range, which makes it suitable for use power converters, motor control, and other applications.

Conclusion

The MIC4807BN is a reliable and efficient gate driver PMIC. Its wide input voltage range and output voltage range make it suitable for many different applications, such as power converters, battery chargers, power supplies, motor control, consumer electronics, and automotive applications. Its efficient voltage shift technique allows it to achieve optimal compatibility with the device it is driving and its protection features provide protection against over-voltage and under-voltage conditions. The MIC4807BN is a great choice for driving large IGBTs, MOSFETs, and SiC FETs.

The specific data is subject to PDF, and the above content is for reference

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