MJE200TSTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	25V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1A, 5A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	45 @ 2A, 1V
Power - Max:	15W
Frequency - Transition:	65MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126
Base Part Number:	MJE200

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Introduction to the MJE200TSTU Transistor

The MJE200TSTU is a device belonging to the single bipolar junction transistor (BJT) category. It is manufactured by a company called Fairchild Semiconductor and is encapsulated in a 2-Pin Package. This BJT is an NPN device and is rated for collector-emitter voltage of 80 volts, collector-base voltage of 80 volts and emitter-base voltage of 5 volts. This particular transistor is also capable of passing a maximum current of 5.0A and has a maximum power dissipation rating of 40W. FCXSTUF series is suitable for applications involving switching at high frequency operation and high breakdown voltages.

Application Field

The MJE200TSTU transistor is most commonly used in applications such as conventional switch-mode power supplies, high frequency operation, inverters, converters and amplifiers. Other uses include high power switching, high speed switching and low power consumption. The high collector-emitter voltage of 80 volts makes it an excellent choice for applications that require high breakdown voltage.

Working Principle

The MJE200TSTU is an NPN transistor, meaning that it is a type of transistor that uses an N-type material for the base and a P-type material for the collector-emitter junction. This technology allows the transistor to operate at high frequency and high breakdown voltages. The operating principle of the MJE200TSTU can be explained as follows. When a small current is applied to the base, the current between the emitter and the collector is amplified. This type of amplifier is used to boost the power of signals and it helps in increasing the efficiency of the overall system. The MJE200TSTU can be used either in a switching mode or as an amplifier. In the switching mode, it is used to switch between circuits, while in the amplifier mode, it is used to increase the amplitude of a signal.

Conclusion

The MJE200TSTU is a single bipolar junction transistor that offers a lot of features. It is capable of withstanding up to 80 volts for collector-emitter voltage, allowing it to be used in a wide range of applications. It can be used as both a switching device and an amplifier. Overall, the MJE200TSTU transistor is an excellent choice for applications that require high breakdown voltage, switching at high frequency operation and high power switching. Its wide range of features makes it a great choice for all sorts of projects.

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