MJE210T

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The MJE210T is a NPN silicon epitaxial type power transistor which is designed for general purpose application.

The MVJ210T is an ideal device for applications such as high speed switching, linear amplification, and variable frequency operation. It has excellent current gain, collector to emitter saturation voltage, and high speed switching properties. It also is an ideal device for powering circuits because of its low total power dissipation and high frequency characteristics.

The dimensions of the MJE210T are 3.2 mm by 2.4 mm. It requires a minimum operating temperature for effective use of -55°C and a maximum temperature of 175°C. The BVCEO is 75V and the power dissipation is 0.3W. The maximum collector current, IC, is 3A and the transition frequency, fT, is 10MHz.

The MJE210T is a single bi-polar Transistor (BJT). It consists of three basic parts which are the base, collector and emitter. A BJT transistor is based on the principle of applying a voltage to the base of the device to control the current flow between the emitter and collector. When a collector-to-emitter voltage is applied and the base current is increased the transistor’s frequency is increased and the transistor will transition from OFF to ON.

In addition, the MJE210T comes with an internal base protection diode to protect the collector from accidental shorts and also includes a resistor connected between the base and the collector which is used to reduce the base current. This helps reduce the power dissipation compared to transistors with a single diode.

The MJE210T is designed as an ideal device for high speed switching, linear amplification and variable frequency operations. It has excellent current gain, low collector to emitter saturation voltage, and high speed switching properties. This makes it a viable option for applications where higher speed is needed.

The application field of the MJE210T can be divided into two main areas. The first is the area of power electronics. This includes anything from motor speed controllers, to power supplies, to inverters. The other area is the area of linear amplification, which includes amplifiers, modulators and RF amplifiers. In both cases the MJE210T is an excellent choice for the job due to its high stability, reliability, low power dissipation and high speed characteristics.

In conclusion, the MJE210T is a NPN silicon epitaxial type power transistor which is designed for general purpose application. It is an ideal device for high speed switching, linear amplification and variable frequency operations. It is a single bipolar transistor with excellent current gain, low collector to emitter saturation voltage, and high speed switching properties. The application fields of the MJE210T cover both the power electronics and linear amplifier area, making it a viable choice for many applications. This concludes the overview of the MJE210T application field and working principle.

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