Allicdata Part #: | MJE2955TTUFS-ND |
Manufacturer Part#: |
MJE2955TTU |
Price: | $ 0.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 10A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 10A 2MHz 600mW Th... |
DataSheet: | MJE2955TTU Datasheet/PDF |
Quantity: | 95 |
1 +: | $ 0.47880 |
10 +: | $ 0.42210 |
100 +: | $ 0.32351 |
500 +: | $ 0.25574 |
1000 +: | $ 0.20459 |
Frequency - Transition: | 2MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | MJE2955 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 8V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 600mW |
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The MJE2955TTU, or high voltage fast switching NPN epitaxial silicon transistor, is a transistor that belongs to a category known as single bipolar junction transistors (BJTs). It is employable for full wave motor speed control applications such as fan, pumps, and other similar small motor speed control applications.
The basic construction of the MJE2955TTU is similar to other transistors, with three electrodes arranged around a semiconductor material, and with the addition of a diode between the emitter and collector (although this diode is not integrated with the hybrid element). The transistor itself is manufactured with a high voltage, fast switching NPN epitaxial silicon, and has a low collector-emitter saturation voltage, allowing it to be used in various types of applications that require high frequency and high power.
The MJE2955TTU is capable of providing excellent performance for full wave motor speed control applications, due to its high switching frequency and power capabilities. The current gains of these transistors are usually quite high, ranging from 140 to 180. This allows them to offer excellent performance even in situations of high power, such as motor speed control applications.
The MJE2955TTU is also extremely reliable, featuring low gate threshold voltage, low gate leakage current, high switching speed, and high collector-emitter saturation voltage. The device also has a low power dissipation, allowing it to be used in various types of power supply options.
The way in which the MJE2955TTU works is based on the relationship between the emitter and collector of the transistor. When an electrical signal is applied to the base of the transistor, electrons flow from the emitter to the collector, producing a current in the collector. The collector voltage is then determined by the amount of current that it is receiving, and the power of the transistor is determined by the current gain.
Since the collector voltage is related to the amount of current, the transistor’s ability to control the speed of a motor is also determined by the current gain. This is because the current gains of this transistor are usually quite high, allowing it to provide excellent motor control performance. This is due to the fact that the higher the current gain, the lower the collector voltage, and thus, motor speed control is easier to achieve.
In addition to these uses, the MJE2955TTU can also be used in various other applications, such as audio amplifiers, automotive applications, communications devices, home appliances, audio power amplifiers, power supplies, and even in medical systems. Given its versatility and performance, the MJE2955TTU is an ideal choice for applications that require high frequency switching as well as high power. These features, coupled with its reliability, make it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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