Allicdata Part #: | MJE210TG-ND |
Manufacturer Part#: |
MJE210TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 5A TO225 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 5A 65MHz 15W Thro... |
DataSheet: | MJE210TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 45 @ 2A, 1V |
Power - Max: | 15W |
Frequency - Transition: | 65MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-225AA |
Base Part Number: | MJE210 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Today\'s modern world has become really interconnected and it is now possible to do many things, such as accessing the internet, using modern electrical appliances and using cutting-edge electronic devices. The MJE210TG is a part of this technology revolution and part of this internet-of-things revolution. It is a multifunctional semiconductor device which can be used in many different applications and as part of an integrated circuit.
This particular device is a bipolar junction transistor (BJT), specifically a single transistor. In order to understand the functional capabilities of this device, it is important to first understand its construction and components. The MJE210TG is built on a single NPN transistor arrangement, although other arrangements such as PNP are possible depending on the application.
The BJT is then connected to a number of resistors, capacitors and inductors. These components serve a number of important functions. Firstly, they act as buffer to the device, limiting the flow of current over its terminals. They also provide an adjustable control for biasing the transistor, which is important for its operation. In addition these components can also provide a feedback path between the input and output of the device, providing improved circuit stability.
These components and their various capabilities are used to great effect in a variety of applications. The MJE210TG has been designed for use in high frequency applications, particularly for radio frequency (RF) transmission. As a single transistor, it can be used on its own for low-power, small-signal applications or as part of a larger integrated circuit to provide more powerful signals.
The BJT is capable of providing high-frequency amplification of signals. This is because of its architecture and the way it is biased. When a small input current is applied to the base-emitter junction, the collector-emitter current increases exponentially. This means that it can provide great amplification of small signals and allow them to reach their target destination at a higher power without being distorted.
In addition to RF transmissions, the bipolar junction transistor can be used as part of an audio amplifier circuit, a voltage regulator circuit and in digital logic devices. The MJE210TG has been designed with these particular devices in mind and has excellent performance in these areas. It is able to handle high power, providing reliable and consistent operation.
Overall, the MJE210TG is a versatile and highly capable device that can be used in many different types of applications. It is a single transistor device, which means it can be used on its own or as part of an integrated circuit. It is capable of providing consistent and reliable operation, as well as high-frequency amplification of signals. It also has excellent performance in audio and digital applications.
The specific data is subject to PDF, and the above content is for reference
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