| Allicdata Part #: | MJE271GOS-ND |
| Manufacturer Part#: |
MJE271G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP DARL 100V 2A TO-225 |
| More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 2A ... |
| DataSheet: |  MJE271G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Darlington |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 1.2mA, 120mA |
| Current - Collector Cutoff (Max): | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1500 @ 120mA, 10V |
| Power - Max: | 1.5W |
| Frequency - Transition: | 6MHz |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-225AA, TO-126-3 |
| Supplier Device Package: | TO-225AA |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MJE271G is a NPN silicon power transistor designed for use in commercial and industrial switching applications requiring high power levels up to and exceeding 1 ampere. This device is also available in other packages, such as TO-263/DPAK and SOT-223/DPAK. It is important to note that each package has its own set of characteristics and specifications, so it is essential to familiarize oneself with them when selecting a package.The device is designed to improve thermal and electrical performance in the most demanding applications. Features of the MJE271G include low current, low voltage, low on-state resistance, low thermal resistance, and high switching speed.The MJE271G can be used in a variety of applications, including audio power, bridge rectification circuits, switching power supplies, and motor switching. The transistor is characterized by its high speed, providing an ideal solution for fast switching operations. It is also well suited for driving loads from low voltage sources.The working principle of the MJE271G is fairly straightforward. The device operates by allowing electrons to move freely between the base and collector electrodes. Current is controlled by applying a base current to the transistor which, in turn, controls the current flowing between the collector and emitter. This is known as a current amplification or "current gain" process.The current gain of the MJE271G is determined by the amount of base current which is applied to the transistor. When the base current is increased, the current gain of the transistor is also increased. This allows for greater power levels and higher switching speeds.The temperature rating of the MJE271G is limited to 125°C for power dissipation with a maximum junction temperature of 175°C. It is also important to note that this device should not be used in environments with temperatures exceeding its ratings. Doing so may cause permanent damage to the device.In conclusion, the MJE271G is a versatile NPN silicon power transistor offering excellent thermal and electrical performance in commercial and industrial switching applications. Its high current and high-speed performance make it ideal for applications requiring fast switching and driving loads from low voltage sources. The device has a wide temperature rating, making it suitable for use in a variety of environments.
The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MJE2" Included word is 17
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MJE210 | STMicroelect... | 0.0 $ | 1000 | TRANS PNP 25V 5A SOT-32Bi... |
| MJE270 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 100V 2A TO... |
| MJE210T | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 40V 5A TO-225Bi... |
| MJE210TG | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP 40V 5A TO225Bip... |
| MJE271 | ON Semicondu... | -- | 1000 | TRANS PNP DARL 100V 2A TO... |
| MJE271G | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 100V 2A TO... |
| MJE200TSTU | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 25V 5A TO-126Bi... |
| MJE243G | ON Semicondu... | 0.41 $ | 939 | TRANS NPN 100V 4A TO225AA... |
| MJE2955TTU | ON Semicondu... | 0.53 $ | 95 | TRANS PNP 60V 10A TO-220B... |
| MJE2955TG | ON Semicondu... | 0.67 $ | 872 | TRANS PNP 60V 10A TO220AB... |
| MJE200STU | ON Semicondu... | -- | 3163 | TRANS NPN 25V 5A TO-126Bi... |
| MJE210G | ON Semicondu... | -- | 2510 | TRANS PNP 40V 5A TO225AAB... |
| MJE200G | ON Semicondu... | 0.37 $ | 845 | TRANS NPN 40V 5A TO225AAB... |
| MJE253G | ON Semicondu... | -- | 7584 | TRANS PNP 100V 4A TO225AA... |
| MJE2955T | STMicroelect... | 0.61 $ | 1872 | TRANS PNP 60V 10A TO-220B... |
| MJE210STU | ON Semicondu... | 0.35 $ | 3806 | TRANS PNP 25V 5A TO-126Bi... |
| MJE270G | ON Semicondu... | 0.46 $ | 1572 | TRANS NPN DARL 100V 2A TO... |
Latest Products
BC807-16W/MIX
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
CP547-MJ11015-CT
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
CP547-CEN1103-WS
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TIP35C SL
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
JAN2N3634
TRANS PNP 140V 1ABipolar (BJT) Transisto...
BULB7216-1
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...