| Allicdata Part #: | MMBT100TR-ND |
| Manufacturer Part#: |
MMBT100 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 45V 0.5A SOT-23 |
| More Detail: | Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 350m... |
| DataSheet: | MMBT100 Datasheet/PDF |
| Quantity: | 27000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 45V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max): | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 5V |
| Power - Max: | 350mW |
| Frequency - Transition: | 250MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Base Part Number: | MMBT100 |
Description
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The MMBT100 is a type of a bipolar junction transistor, specifically a single transistor. This particular type of BJT is used in many different applications, owing to its feature of allowing current to flow from the collector to the emitter. It is used in a wide variety of applications, including switching, amplifying, and oscillating.The MMBT100 is manufactured using silicon epitaxial process, making it suitable for use in a wide range of applications. It also has good stability, allowing it to be used over a wide temperature range. This makes it an ideal choice for many industrial and commercial uses.The transistor\'s construction is based on three layers. The base layer consists of an N type semiconductor material, the emitter of a P type semiconductor material, and the collector of an N type semiconductor material. The emitter and collector are connected to the base layer through a layer of metal oxide.The transistor works by allowing an electrical current to flow from the emitter to the collector. This is achieved by applying an electrical voltage to the base. When the voltage is applied, the electrons in the base material are attracted to the positively charged emitter. This creates a small aperture in the base material, allowing the electrons to cross into the collector region.In this way, current can flow from the collector to the emitter, and this current flow can be controlled through the control of the base region. This type of control is what allows the transistor to be used for a variety of applications, such as amplifying, switching, and oscillating.The MMBT100 can be used in both digital and analog applications. It can be used in circuits that need to control and switch analogue signals, while it can also be used in digital circuits. In both cases, the use of the transistor allows for the control and amplification of signals.The transistor is also used in many consumer applications, such as in consumer electronics and computers. These applications typically require a high degree of precision and control, and the MMBT100 is able to provide this.The MMBT100 is a versatile and popular transistor, and it is used in a wide range of applications. It offers good stability and reliability, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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MMBT100 Datasheet/PDF