MMBT3906 Discrete Semiconductor Products |
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Allicdata Part #: | MMBT3906FSTR-ND |
Manufacturer Part#: |
MMBT3906 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.2A SOT-23 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 350m... |
DataSheet: | MMBT3906 Datasheet/PDF |
Quantity: | 210000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 350mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBT3906 |
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The MMBT3906 is a silicon epitaxial PNP transistor used for general purpose darlington application. This transistor is available in two different types, the MMBT3906 and the MMBT3906/296. Both packages have similar electrical characteristics and can be used interchangeably. The MMBT3906 is a general purpose silicon epitaxial PNP transistor with high power dissipation, low collector-emitter breakdown voltage and excellent hFE linearity. It is suitable for general purpose darlington applications.
MMBT3906 is widely used in various applications, such as low-power amplifiers, audio amplifiers, oscillators and radio receivers. Compared to other types of transistors, MMBT3906\'s advantages include low voltage drop, good linearity and low power dissipation.
MMBT3906 is classified as a Bipolar (BJT) Single type of transistor. It consists of three layers made of silicon (N-type, P-type and N-type). Its basic working principle is base-collector-emitter (BCE) action. In the input circuit, a signal is applied at the base terminal and it is amplified in the collector-emitter circuit to gain a stronger output. The output signal is stronger than the input signal but with a proportionally smaller amplitude.
The working principle of MMBT3906 is quite simple and easy to understand. When a forward bias is applied, electrons from the N-type layer are attracted to the P-type base region, creating an inversion layer and increasing the number of electrons available for current conduction. At the same time, a reverse bias is applied on the collector side, which creates an electric field opposing the inversion layer\'s conduction. As a result, a weak signal is generated and passed from the base to the collector. The signal is then amplified and passed from the collector to the emitter.
Due to its low power dissipation, high linearity and low voltage drop, the MMBT3906 is an ideal choice for a range of low power applications, including audio amplifiers, oscillators and radio receivers. Moreover, its compact size and easy to use a package make it suitable for a vast number of projects. Overall, the MMBT3906 is a reliable and accessible option for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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