MMBTA64-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Discontinued at Digi-Key
Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20000 @ 100mA, 5V
Power - Max:	300mW
Frequency - Transition:	125MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	MMBTA64

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MMBTA64-7 Transistors are one of the most common types of bipolar junction transistors (BJT) and are generally used for larger scale, higher power electronics. These transistors are a type of single BJT and are popularly used in applications like switches, amplifiers, and relays. The MMBTA64-7 transistor is designed to have low on-state resistance and good current transfer ratio (CTR), which makes it an ideal choice for high-power applications.The MMBTA64-7 Transistor is a three-layer, PNP type, surface-mounted BJT which features a highly efficient current-transfer ratio due to its high-voltage transistor rating and maximum collector-emitter breakdown voltage (BVceo). This device is made up of an NPN structure, which includes two P-type doped regions and a single N-type doped regions, that are sandwiched between two collector and emitter electrodes, respectively. The collector and emitter take the form of a moderately tight metallic contact that isolates the N-type region, which then connects to a fourth electrode contact at the base.This particular Transistor has a forward current gain, which is usually categorized under its “hfe” rating. The forward current gain, or hfe rating, directly affects the transistor’s magnitude of amplification and its ability to amplify a signal. The hfe rating of the MMBTA64-7 is usually calculated at an 800mA collector current, and a 40mA base current, and it is commonly calculated at 400 to 550. This means that the MMBTA64-7 is suitable for a wide range of amplifications, with its gain falling somewhere in the middle of that range.Also, the MMBTA64-7 Transistor has a relatively high collector-emitter breakdown voltage, which means it can handle a maximum of 30 volts between its collector and emitter. This breakdown voltage is usually measured at +150 volts, which provides a good amount of protection and allows for safe operation of the transistor at higher currents when compared to other BJTs. Finally, this Transistor has a low on-state resistance and an average switching time of around 10ns, which makes it an ideal choice for high-power applications where the need for speed and efficiency is of utmost importance.The MMBTA64-7 Transistor is primarily used in application fields such as high-frequency switching and general amplification. Its relatively low on-state resistance, fast switching time and large current throughput makes it suitable for a wide range of applications, including digital switches, X/Y axis control in video game systems, audio volume control and even power switching in computers. The MMBTA64-7 Transistor is also popular within portable instrument applications, due to its small size, low power consumption and wide range of current and voltage ratings.In regards to its working principles, the MMBTA64-7 Transistor operates in a similar manner to all other BJTs. Essentially, the base-emitter junction of the transistor provides a voltage bias between the base and the emitter and allows for current to be controlled when the base is stimulated by a control signal. The more voltage applied to the base, the more current will flow from the collector to the emitter, which in turn increases the amount of amplified output. With this in mind, the MMBTA64-7 provides a good balance between its amplification capabilities and its current-handling capacity, which makes it a preferred option for many electronics applications.To sum up, the MMBTA64-7 Transistor is an efficient, reliable and widely used device, which offers a good balance between current-handling capacity, amplification and its fast switching capabilities. Its wide range of applications make it an ideal choice for a variety of circuits and systems and its popularity is evident in its widespread usage.

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