MMBTH10LT1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	25V
Frequency - Transition:	650MHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 4mA, 10V
Current - Collector (Ic) (Max):	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBTH10

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The MMBTH10LT1G is a transistor from a family of devices known as Bipolar Junction Transistors (BJTs). BJTs are primarily used for amplification and switching within radio frequency (RF) applications. The MMBTH10LT1G is a general-purpose transistor suitable for a wide variety of RF applications and has become a popular choice due to its high gain and switching characteristics. The ability of the MMBTH10LT1G to amplify and switch signals makes it ideal for a number of common RF applications such as amplifiers, mixers and oscillators. The transistor is also suitable for use in linear applications such as filters and detectors. The MMBTH10LT1G is a three-terminal device with a collector, base and emitter. The collector and emitter are both connected to an external circuit and act as the input and output terminals of the transistor. The base terminal is connected to the external circuit and is used to control the current flow between the collector and emitter. The working principle of the MMBTH10LT1G is based on the fact that the current flowing through the base terminal affects the current flowing through the collector-to-emitter terminals. When a small current passes through the base, a much larger current is allowed to flow between the collector and emitter. This is known as current amplification, and is key to the MMBTH10LT1G’s ability to amplify or switch signals.The ability of the MMBTH10LT1G to amplify or switch signals is determined by its gain and switching characteristics. The gain of the transistor is determined by its current gain or hFE, which is the ratio between the current flowing through the collector to that flowing through the base. The higher the current gain, the greater the ability of the transistor to amplify signals.The switching characteristics of the MMBTH10LT1G are determined by its on-state and off-state resistances. The transistor’s on-state resistance is known as the saturation resistance and is the maximum resistance between the collector and emitter of the transistor when it is on; this resistance determines the transistor’s switching speed. The off-state resistance is known as the cut-off resistance and is the resistance between the collector and emitter of the transistor when it is off; this resistance determines the transistor’s response time. The MMBTH10LT1G is a popular choice due to its versatility and ability to perform well in a wide variety of RF applications. The transistor has a current gain of 200 and an on-state resistance of 50 ohms, making it suitable for many common RF applications. The transistor also has an off-state resistance of 300 ohms and a switching speed of 1 nanosecond, providing excellent speed and response time. The MMBTH10LT1G is a versatile and reliable transistor well suited for RF applications such as amplifiers, mixers and oscillators. Its high current gain and switching characteristics make it an ideal choice for a variety of applications. The MMBTH10LT1G is a general-purpose transistor that can be used in a wide range of RF applications.

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