MMBTA70LT1 Allicdata Electronics
Allicdata Part #:

MMBTA70LT1-ND

Manufacturer Part#:

MMBTA70LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 0.1A SOT-23
More Detail: Bipolar (BJT) Transistor PNP 40V 100mA 125MHz 225m...
DataSheet: MMBTA70LT1 datasheetMMBTA70LT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Power - Max: 225mW
Frequency - Transition: 125MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBTA70
Description

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MMBTA70LT1 Application Field and Working Principle
The MMBTA70LT1 is a type of bipolar junction transistor (BJT). It belongs to a subset of BJTs called single transistors, which are designed for many low-voltage applications such as amplifier circuits, switch circuits, and low-noise analog circuits. Because of its excellent properties and small physical size, the MMBTA70LT1 is particularly suitable for many portable devices where size and power usage are important considerations.

A BJT is a three-terminal semiconductor device, with one terminal is called the base, one is called the collector and one is called the emitter. It amplifies a small input current at the base to a larger output current at the collector. Actual working of a BJT comprises of three stages: input stage, active stage, and output stage.

In the input stage, the base voltage controls the current that flows through the emitter-base junction, which is known as the base current. This base current flows on to the collector, making a small current in the collector. This is the same current that is given by the base voltage. As long as the base voltage is low, only a small current will flow though the MJT.

In the active stage, the current amplified increases due to the multiplication effect of the two junctions. The current gain (also known as the current transfer ratio, or CTR) is defined as the ratio of the collector current to the base current. The MMBTA70LT1 has a CTR of about 70, meaning it can amplify its input current by 70 times.

In the output stage, further current amplification occurs due to the action of the gain of the transistor, known as hFE value. The MMBTA70LT1 has an hFE value of about 60, meaning it can further amplify its collector current by 60 times. This is the output current, which will be the amplified version of the input current.

In general, the MMBTA70LT1 has a low (leakage) current, making it suitable for low-noise analog circuitry. It also has a low saturation voltage and a fast switching speed, which makes it suitable for amplifier and switch circuit applications. It also has a relatively low collector-emitter saturation voltage, making it suitable for portable devices.

In conclusion, the MMBTA70LT1 provides a versatile BJT suitable for many low voltage applications due to its excellent properties and small physical size. It can amplify a small input current by a high current transfer ratio and further gain value, allowing it to be used in amplifier and switch circuits as well as in low-noise analog circuitry.

The specific data is subject to PDF, and the above content is for reference

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