MMBT2222AWT1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1V @ 50mA, 500mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	150mW
Frequency - Transition:	300MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SC-70-3 (SOT323)
Base Part Number:	MMBT2222A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMBT2222AWT1G Application Field and Working PrincipleThe MMBT2222AWT1G is a widely used transistor that belongs to the category of Transistors - Bipolar (BJT) - Single. The MMBT2222AWT1G is an NPN silicon epitaxial transistor that is commonly used in various applications such as switching, amplifier, oscillator, and other circuits.The MMBT2222AWT1G has a maximum collector-emitter voltage of 45V, a peak collector current of 600mA, and a maximum power dissipation of 625mW. It also has a gain of 100-300 at Ic= 10mA and Vce= 10V. The maximum temperature at which the transistor can operate on is 150°C, while the typical transition frequency is 1 MHz.The MMBT2222AWT1G has a wide range of applications in both commercial and industrial areas. It can be used as a switch in working circuits, and it can function as an amplifier, oscillator, and low-frequency oscillator in radio receivers, audio amplifiers, and other applications. It can also be used as a power transistor for motor control, amplifier circuit, and relay.The MMBT2222AWT1G works on the principle of bipolar junction transistors (BJT). It is composed of two diodes connected back-to-back. The transistors feature three terminals - the collector, base, and emitter. When a small current flows through the base terminal, it results in the flow of a much larger current between the collector and the emitter. This amplified current can be used to activate and control different kinds of devices.The MMBT2222AWT1G works on the principle of the current amplifier. It is composed of a base and a collector. When the current is passed through the base terminal, it produces a larger current in the collector terminal. This increase in current brings about an increase in the voltage between the collector and the emitter. This change in voltage is what causes the transistor to conduct.The MMBT2222AWT1G is a very reliable device and can operate for many years without any significant degradation in performance. Moreover, it is a cost effective solution for many applications. It is an ideal choice for devices that require a low-cost and reliable solution.In conclusion, the MMBT2222AWT1G is an important member of the Transistors - Bipolar (BJT) - Single family. It is a reliable, cost effective device that can be used in a wide range of applications such as switching, amplifier, oscillator and other circuits. It works on the principle of bipolar junction transistors (BJT) and the current amplifier principle. With its wide range of applications in both commercial and industrial areas, the MMBT2222AWT1G is an ideal solution for any kind of device requiring a low-cost and reliable solution.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description