MMBT3906-G

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MMBT3906-G is a Small Signal Transistor (BJT) – Single, manufactured by ON Semiconductor. It is a NPN Epitaxial Silicon Transistor. It is typically used for general-purpose low-power amplifying and switching applications.

Features of MMBT3906-G

• Collector–Emitter Voltage: –60 V
• Emitter–Base Voltage: –6 V
• Collector–Emitter Saturation Voltage: –0.2 V
• High Current Gain
• Excellent Gain Linearity
• Meets MSL-1A Requirements
• Pb−Free Packages are Available

Applications of MMBT3906-G

MMBT3906-G can be used in general-purpose switching and amplifying applications, such as low-power audio amplifiers and small signal stages. It can also be used in battery-powered applications and RF amplifiers.

Working Principle of MMBT3906-G

MMBT3906-G is a NPN bipolar junction transistor (BJT). It has three terminals: collector (C), base (B) and emitter (E). When a small current flows through the base terminal, a larger current flows from the collector to the emitter terminal. The base current controls the collector-emitter current (I _CE) by giving off thermal electrons to the junction region. As the base current increases, the collector-emitter current increases which is known as a current gain (the ratio of collector-emitter current to the base current is called the current gain).

The current gain of MMBT3906-G is high, making it suitable for applications where amplifier gain is desired. Its Emitter–Base Voltage is –6 V and its Collector–Emitter Voltage is –60 V. It also has a Collector–Emitter Saturation Voltage of –0.2 V, which is low enough for most applications. It meets MSL-1A Requirements for moisture sensitivity, and Pb−Free Packages are available.

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