| Allicdata Part #: | MMBT3906RFGTR-ND |
| Manufacturer Part#: |
MMBT3906 RFG |
| Price: | $ 0.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | TRANSISTOR, PNP, -40V, -0.2A, 10 |
| More Detail: | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 350m... |
| DataSheet: | MMBT3906 RFG Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.01063 |
| 6000 +: | $ 0.00959 |
| 15000 +: | $ 0.00833 |
| 30000 +: | $ 0.00750 |
| 75000 +: | $ 0.00667 |
| 150000 +: | $ 0.00556 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 200mA |
| Voltage - Collector Emitter Breakdown (Max): | 40V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
| Power - Max: | 350mW |
| Frequency - Transition: | 250MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23 |
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MMBT3906 RFG applications and working principle among transistors refer to the use and operation of a bipolar junction transistor, more specifically a single one. This type of transistor is a device that forms an electrically controlled bridge between two types of conductors that, when combined or combined, can be used to switch or amplify electrical signals. A bipolar junction transistor (BJT) consists of two p-type semiconductor layers separated from an n-type semiconductor layer at the base.
MMBT3906 RFG applications find common use in many of today’s electronic products, including television receivers and computer systems. This transistor can be found inside of integrated circuits (ICs), and serves as a medium for switching electrical signals within the IC. The MMBT3906 RFG is particularly well suited for applications in which the input signal is low and high frequencies.
In the case of the MMBT3906 RFG, the working principle works by allowing the collector current to exceed the base current. This current gain is known as the current gain of the transistor. In essence, when the base current increases, it causes a greater current to flow through the collector. Through this working principle, an electrical signal is amplified.
When using the MMBT3906 RFG, it is important to bear in mind that the power dissipation of the transistor must be kept to at least 4W and the junction temperature should be kept at 25°C or below. The maximum junction temperature should not exceed 150°C. It is also recommended that the MMBT3906 RFG be used with a minimum of 30V to avoid overstressing the device. It should also be connected to negative and positive terminals for proper operation.
MMBT3906 RFG transistors are also sensitive to heat. To prevent overheating, the manufacturer recommends derating the device by a factor of 10 when the ambient temperature reaches 85°C. In addition, the manufacturer recommends that the device be kept away from direct sunlight, and placed in an area of good air circulation. Failure to follow these precautions can result in device failure and severe damage.
MMBT3906 RFG applications of transistors are highly versatile and used in many different applications. Their ability to switch and amplify electrical signals means they offer a great deal of potential for a wide range of applications. With the right precautions, this transistor can be used safely and effectively in a variety of different projects.
The specific data is subject to PDF, and the above content is for reference
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MMBT3906 RFG Datasheet/PDF