MMBTH24-7 Allicdata Electronics
Allicdata Part #:

MMBTH24DITR-ND

Manufacturer Part#:

MMBTH24-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN VHF/UHF 40V SOT23-3
More Detail: RF Transistor NPN 40V 50mA 400MHz 300mW Surface Mo...
DataSheet: MMBTH24-7 datasheetMMBTH24-7 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 400MHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MMBTH24
Description

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The MMBTH24-7 is a discrete-type transistor that falls under the category of Bipolar Junction Transistors (BJTs) and operates at radio frequencies (RF). This semiconductor device is capable of amplifying analog or digital signals, allowing for greater signal strength and range. With its high-gain characteristic and its ability to support a wide range of frequencies, the MMBTH24-7 is an ideal choice for many RF applications.

The MMBTH24-7 is a NPN device that consists of three terminals: the collector (C), base (B), and emitter (E). The base is the control terminal, used to control the current flow between the collector and emitter. When a small amount of current is applied to the base, this allows a large current to flow between the collector and emitter. This is known as bipolar transistor switching.

The MMBTH24-7 is designed to work with a wide range of frequencies, up to 1000 MHz. This makes it an ideal choice for RF applications, where high-frequency signals are required. The device is also able to provide high gain, which allows it to amplify input signals, resulting in better signal strength and transmission distance.

The MMBTH24-7 is composed of a silicon monolithic NPN transistor, allowing for high-frequency operation. This device also features high-breakdown voltage and low on-state capacitance, allowing for better noise performance and stability. Furthermore, the MMBTH24-7 is also able to withstand a large amount of power levels, enabling it to operate even in harsher conditions.

In addition to its excellent frequency response, the MMBTH24-7 is also capable of providing a large input and high-output resistance, thereby allowing it to reduce distortion and noise. The device also features excellent linearity and temperature stability, making it a great choice for temperature-sensitive applications.

The MMBTH24-7 is an ideal solution for a wide range of applications, including broadband, land mobile communication, wireless LAN, and instrumentation. The device is also able to function in both analog and digital circuits, allowing for greater versatility. In addition, the MMBTH24-7 is available in several packages, including small-signal devices, wide band, and high-performance power transistors.

In conclusion, the MMBTH24-7 is an excellent choice for many RF applications. With its wide frequency range and high-performance characteristics, the device is able to amplify input signals and reduce distortion and noise. Furthermore, the device is also able to operate in both analog and digital circuits, demonstrating its great versatility. Finally, the MMBTH24-7 is available in various package sizes, allowing for easy integration into any system design.

The specific data is subject to PDF, and the above content is for reference

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