MMBTH81_D87Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	600MHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)
Base Part Number:	MMBTH81

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Introduction to MMBTH81_D87Z

MMBTH81_D87Z is a NPN/N channel Bipolar Junction Transistor (BJT) which is primarily used in RF signal amplifying circuits. It is classified as a small signal transistor, meaning it is extremely sensitive to signal changes, and makes it suitable for circuits that require precise current control. It can be used in complimentary pairs with other transistors to generate powerful amplifying or switching signals due to its low cost and superior performance compared to other transistors.

Typical Applications for MMBTH81_D87Z

MMBTH81/D87Z is typically used for low frequency radio amplifier circuits such as AM radio amplifiers, FM radio amplifiers, and FM stereo radio amplifiers. It can also be used in TV transmitters, audio amplifiers, and in some high voltage power supplies. The MMBTH81_D87Z is also ideal for use in oscillator circuits, pulse generator circuits, and in switching circuits.

Working Principle of the MMBTH81_D87Z

The working principle of the MMBTH81_D87Z is based on the flow of current between the base and the emitter of the transistor. When the voltage applied to the base electrode exceeds the voltage of the emitter electrode, the electrons from the base travel through the transistor junction, and effect the flow of current from the emitter section to the collector section of the transistor.This transistor is based on a NPN/N channel construction. In this configuration, the electrons flow from the base to the emitter when the base-emitter voltage is greater than 0.6V. The collector acts to control the flow of electrons between the emitter and the base. The amount of current that can flow through the transistor is regulated by the amount of voltage applied to the base-emitter junction. The MMBTH81_D87Z is capable of amplifying signals of up to 200MHz, making it ideal for amplifying FM and AM audio signals. Due to its high current amplification factor, the MMBTH81_D87Z is capable of producing large currents at low voltage levels. This makes it ideal for low power circuits that require precise current control.

Conclusion

The MMBTH81_D87Z is an ideal transistors for use in RF signal amplifier circuits. Its low cost and superior performance coupled with its high current amplification factor make it a popular choice for circuits that require precise current control. It can be used in complimentary pairs with other transistors to generate powerful amplifying or switching signals. By understanding the working principle of the MMBTH81_D87Z, circuit designers can use this transistor to create reliable and precise circuits that are capable of amplifying signals of up to 200MHz.

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