MMBZ33VALT3

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The MMBZ33VALT3 is a three-pin, bi-directional, low-voltage transient voltage suppressor (TVS - Diode) device. This device is specifically designed for high voltage applications in which fast acting transient voltage protection is required. It is designed to protect circuits against surges of up to 28V. The MMBZ33VALT3 is constructed from dioctyl phthalate (DOP) material and features a low-voltage threshold of 5.2V, with a maximum breakdown voltage of 28V at a breakdown current of 2mA. Additionally, it features an exemplary thermal resistance of 90°C/W.

The MMBZ33VALT3 is used in a variety of applications where high-speed transient protection is needed. These applications include automotive electronics, consumer electronics, and industrial electronic devices such as switches, relays, and timers. Additionally, the device is well suited for use as an ESD protection device in applications with static discharge such as those found in medical, data processing, and communications equipment.

In operation, the MMBZ33VALT3 provides protection by preventing voltage breakdown, or clamping, when transient voltage levels exceed the breakdown voltage of the device. The device works by allowing current to flow at voltages up to its breakdown voltage, and then rapidly clamping the voltage to a lower level when the voltage level increases beyond the breakdown point. This limit the voltage and current, and prevents further damage and ensures the device can be safely used in high-voltage environments. Once triggered, the device will remain in the off state and will not reset until an opposite polarity voltage is applied.

In addition to providing protection against transient voltages, the MMBZ33VALT3 can also be used as a protection device against electrostatic discharge (ESD). It is designed to protect against ESD events up to 15KV, and protects against the loss of data due to ESD events.

The MMBZ33VALT3 is a robust, high-reliability device that can be used in a variety of applications where high-speed transient protection is needed. Its small size and low-profile make it ideal for use in space-restricted settings. Its DOP construction and high-quality materials provides exceptional performance in high-voltage, high-frequency applications. Additionally, the device is ESD protected, making it suitable for use in a variety of environments where ESD protection is required.

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