MMBZ4710-E3-18 Allicdata Electronics
Allicdata Part #:

MMBZ4710-E3-18-ND

Manufacturer Part#:

MMBZ4710-E3-18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 25V 350MW SOT23-3
More Detail: Zener Diode 25V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ4710-E3-18 datasheetMMBZ4710-E3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02024
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 25V
Tolerance: ±5%
Power - Max: 350mW
Current - Reverse Leakage @ Vr: 10nA @ 19V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The MMBZ4710-E3-18 is a single Zener diode made with advanced thin-film technology to ensure precise Zener breakdown voltage tolerance and Zener noise reduction. Its small size and high-performance make it suitable for use in a wide range of applications in areas such as power conversion, telecommunications, and medical systems.

The maximum reverse (Zener) Leakage Current (Izt) of the MMBZ4710-E3-18 is 2.0mA. It also has a forward voltage of 1.0V and a reverse voltage of 18V, making it suitable for use in applications such as:

  • Power supply regulation
  • Noise reduction
  • Voltage reference
  • Voltage clamping
  • Delay lines
  • Motor control circuits

Working Principle

The MMBZ4710-E3-18 is a single Zener diode, which is a diode with a controlled reverse breakdown voltage, that is used to regulate voltage in circuits. Reverse breakdown is the point at which current starts to flow in the reverse direction and is increased by lowering the bias voltage. This breakdown voltage can be precisely controlled by the manufacturer. In order for the MMBZ4710-E3-18 to function properly, the Zener characteristics should be understood. The Zener characteristic has two distinct regions.

The first is the normal diode region, where the diode acts like an ordinary diode. When a voltage is applied to the anode, current will flow in the forward direction. When a voltage is applied to the cathode, current will flow in the reverse direction.

When the voltage reaches the Zener voltage, it enters a second region and the diode begins to conduct in the reverse direction. This is called reverse breakdown and is the basic operation of a Zener diode. This reverse breakdown voltage is precisely controlled by the manufacturer. At this breakdown voltage, the Zener diode provides a path of low resistance and allows current to flow in the reverse direction.

The Zener voltage is determined by the characteristics of the Zener diode. For the MMBZ4710-E3-18, the Zener voltage is 18V. This means that when the voltage exceeds 18V, the diode will start to conduct in the reverse direction.

As the reverse voltage increases, the current in the reverse direction also increases. This is an important factor for the design of circuits using MMBZ4710-E3-18. The maximum allowable reverse current must be selected to ensure long-term reliability. The maximum allowable reverse current of the MMBZ4710-E3-18 is 2.0mA.

Conclusion

The MMBZ4710-E3-18 is a single Zener diode that is used in many applications. It is made with advanced thin-film technology to ensure precise Zener breakdown voltage tolerance and Zener noise reduction. It is suitable for use in applications such as power supply regulation, noise reduction, voltage reference, and voltage clamping. The maximum reverse (Zener) Leakage Current (Izt) of the MMBZ4710-E3-18 is 2.0mA and its Zener voltage is 18V.

The specific data is subject to PDF, and the above content is for reference

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