MMBZ4710-HE3-08

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The MMBZ4710-HE3-08 chip is a single-terminal, surface-mount, low-leakage Zener diode. It is a 3.3 V silicon-based p-n junction type, with a voltage tolerance of +/- 5 percent.

The device is typically used for protecting electronic circuits from transients, overvoltage, and reverse-polarity. Due to its low-leakage, this Zener diode is also suitable for use in systems where high-frequency switching is involved.

The MMBZ4710-HE3-08 has a power dissipation of 135mW, a minimum reverse standby current of 10uA, and a maximum reverse current of 50uA. It also has a maximum reverse voltage of 3.3V and a reverse recovery time of 300ns.

The working principle of the MMBZ4710-HE3-08 Zener diode is based on the P-N junction. A voltage is applied across the diode, which causes current to flow through it. When the applied voltage exceeds the Zener breakdown voltage, the diode conducts in reverse, which results in a constant voltage across the diode.

The MMBZ4710-HE3-08 is suitable for use in a wide range of applications. For example, it can be used as a voltage reference in circuits, as a voltage limiter to protect sensitive components, or as a voltage regulator in DC-DC power converters. It can also be used in high-frequency switching applications, such as switching power supplies.

In conclusion, the MMBZ4710-HE3-08 is a single-terminal, surface-mount, low-leakage Zener diode with many applications. Its working principle is based on the P-N junction, and it can be used for voltage regulation, protection, and switching.

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