Allicdata Part #: | MMBZ5229ELT3G-ND |
Manufacturer Part#: |
MMBZ5229ELT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 4.3V 225MW SOT23-3 |
More Detail: | Zener Diode 4.3V 225mW ±5% Surface Mount SOT-23-3 ... |
DataSheet: | MMBZ5229ELT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 4.3V |
Tolerance: | ±5% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 22 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBZ5229 |
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MMBZ5229ELT3G Application Field and Working Principle
The MMBZ5229ELT3G is a small signal surface mount Zener diode, designed for use in low voltage voltage regulation applications. This diode is capable of operating at up to 175°C junction temperature, and has operating current ratings of 1A and peak forward reverse current ratings of 2A. This diode is an ideal choice for applications such as protection against electrical transients.
Applications
The MMBZ5229ELT3G is designed for use in a variety of low voltage applications and can be used for a variety of low voltage voltage regulation applications. Common applications include:
- Voltage regulation circuits
- Motor control circuits
- Power supply protection
- Typical voltage references
- TVS protection
- Noise reduction
- Floating voltage references
Working principle
The MMBZ5229ELT3G works on a simple principle of forward voltage being dropped across the diode junction and then amplified to a reverse bias voltage. The diode junction is formed by two layers of doped semiconductor material, including a buried layer of high-density gallium arsenide (GaAs). When forward voltage is applied to the diode, the junction forms a junction barrier, which activates current flow. The current then forms a hole between the two layers of semiconductor material, and the potential builds up around the junction. The potential continues to build until the reverse voltage across the diode reaches a peak point. At this point, the flow of current is stopped and the forward voltage drop is equal to the peak reverse voltage. The peak reverse voltage varies depending on the type of diode and the current flow.
The peak voltage that the diode can achieve is a key factor in determining its use as a voltage reference. For example, a diode with a peak voltage of 3.3V is ideal for use as a voltage reference for a 3V device. When using a Zener diode as a voltage reference, it is important to consider the additional properties of the diode, such as the dynamic resistance of the diode, the temperature coefficient and the impulse breakdown voltage.
Conclusion
The MMBZ5229ELT3G is a small signal surface mount Zener diode, designed for use in low voltage voltage regulation applications. With peak forward reverse current ratings of 2A and operating temperature of up to 175°C, the MMBZ5229ELT3G is an ideal choice for use in a variety of low voltage applications. The diode is capable of achieving a peak voltage of up to 3.3V and is ideal for use as a voltage reference. It is also important to consider additional factors such as the dynamic resistance, temperature coefficient, and impulse breakdown voltage when using a Zener diode as a voltage reference.
The specific data is subject to PDF, and the above content is for reference
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