MMBZ5233BLT1G Allicdata Electronics
Allicdata Part #:

MMBZ5233BLT1GOSTR-ND

Manufacturer Part#:

MMBZ5233BLT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 6V 225MW SOT23-3
More Detail: Zener Diode 6V 225mW ±5% Surface Mount SOT-23-3 (T...
DataSheet: MMBZ5233BLT1G datasheetMMBZ5233BLT1G Datasheet/PDF
Quantity: 12000
Stock 12000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 3.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBZ5233B
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMBZ5233BLT1G is a Single Zener Diode manufactured by ON Semiconductor. It is a high-efficiency silicon junction device designed for the use in voltage regulation and voltage clamping applications.

Features

  • High surge capability
  • Low power dissipation
  • High reliability
  • Low zener impedance
  • High peak current rating
  • Low leakage current
  • High thermal stability

Applications

The MMBZ5233BLT1G is suitable for use in a wide range of applications, including active switch circuits, voltage-sensing and shunting applications, overvoltage protection circuits, temperature sensing circuits, current sensing circuits and ESD protection circuitry. It is also suitable for use as a voltage reference in industrial electronics, automotive systems, telecoms equipment, telecoms systems and systems controlling household appliances.

Working Principle

The MMBZ5233BLT1G operates on the basic principles of a reverse-biased semiconductor PN junction. It has a low forward voltage drop, a high reverse voltage rating and a large surge capability, making it a suitable choice for applications requiring high reliability and stability.

When reverse voltage is applied to the diode, the electric field created by the applied voltage will cause the minority carriers of the P-type material to accelerate across the junction and disperse. This creates a potential difference which is known as the reverse saturation current.

The MMBZ5233BLT1G can be used in a Voltage Regulation (VR) application by placing the diode between two points in the circuit, one point being higher voltage than the other. The diode will regulate the current between the two points, allowing only the current in one direction. The VR application is used in many different circuits to maintain a desired voltage in transistors or other components.

The MMBZ5233BLT1G can also be used in a Voltage Clamping application. In this type of application, the diode is placed between two points, one point having a higher voltage than the other. The diode will clamp the voltage at the lower point, preventing it from overshooting the higher point. The diode will also limit the current in both directions, thus providing protection from surges and overcurrents. Voltage Clamping applications are commonly used in power supplies, regulators and overvoltage protection circuits.

In conclusion, the MMBZ5233BLT1G is a high-efficiency silicon junction diode designed for use in voltage regulation and voltage clamping applications. It is suitable for use in a variety of different applications, as it is able to withstand high voltages, has a large surge capability and has a low forward voltage drop. The diode can be used in both voltage regulation and voltage clamping circuits to provide protection from overvoltages and to maintain a desired voltage in a circuit.

The specific data is subject to PDF, and the above content is for reference

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