MMBZ5242ELT3G Allicdata Electronics
Allicdata Part #:

MMBZ5242ELT3G-ND

Manufacturer Part#:

MMBZ5242ELT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 12V 225MW SOT23-3
More Detail: Zener Diode 12V 225mW ±5% Surface Mount SOT-23-3 (...
DataSheet: MMBZ5242ELT3G datasheetMMBZ5242ELT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 9.1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBZ5242
Description

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The MMBZ5242ELT3G is part of ON Semiconductor’s family of Zener diodes, and is specifically a single, low-power Zener diode with a range of operating specifications. It is a general purpose, space-saving component, which is ideal for applications where a single diode is needed for voltage regulation. It has an avalanche breakdown voltage of between 18 V and 80 V with a power dissipation of 200 mW, and is an ultralow-voltage Zener diode. It features a highly-accurate temperature coefficient and a low package capacitance.

As a single Zener diode, the MMBZ5242ELT3G is able to regulate the voltage of one circuit, while blocking any voltage that could potentially damage other components. This diode is specifically designed to clamp voltage levels, and its low-power specification makes it ideal for portable devices running on batteries. One of the most common applications for them is in RS232 line receivers, where the diode is placed between the RS232 connector and the ground. In this application, it ensures the voltage in the RS232 lines does not exceed the acceptable level.

The principles behind the working of the MMBZ5242ELT3G are based on the operation of a pn junction diode. A pn junction diode has two regions. The area at the interface is known as the depletion layer and contains no charge-carriers. Electron holes are present in the two regions on either side of the diode. The electric field in the junction affects the electrons and holes, causing them to move away from their original position. This creates an electric potential between the two regions.

When a reverse voltage is applied across the MMBZ5242ELT3G, the electric field within the depletion region increases, causing a majority of the carriers from the n-type region to move into the p-type region. This increases the electric potential further and creates an avalanche breakdown voltage. This breakdown voltage is known as the Zener breakdown and it is this effect that makes Zener diodes useful for voltage regulation.

By carefully controlling the processing of the MMBZ5242ELT3G, the breakdown voltage can be controlled. This means that it can be adjusted to be applied to different circuits and voltage levels. This makes the MMBZ5242ELT3G suitable for a variety of circuit conditions and applications. Its 200 mW power dissipation rating makes it perfect for use in low-power applications, as it helps to maximise battery life.

The MMBZ5242ELT3G is an excellent choice for applications where low-power, single-diode voltage regulation is needed. With its wide range of breakdown voltage levels and its reliable temperature coefficient, it is perfect for applications such as RS232 line receivers, where a consistent voltage needs to be maintained regardless of environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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