Allicdata Part #: | MMBZ5246C-G3-08-ND |
Manufacturer Part#: |
MMBZ5246C-G3-08 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 16V 225MW SOT23-3 |
More Detail: | Zener Diode 16V 225mW ±2% Surface Mount SOT-23-3 |
DataSheet: | MMBZ5246C-G3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.02553 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 16V |
Tolerance: | ±2% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 17 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 12V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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MMBZ5246C-G3-08 is a single Zener diode from Diodes Incorporated. It has a broad application field and a simple working principle.
Application Field
- MMBZ5246C-G3-08 is suitable for general purpose silicon Zener diode applications. It is frequently used in voltage regulation and low voltage voltage clamping.
- MMBZ5246C-G3-08 can be used in static stabilizing circuits and protect circuits, such as to eliminate over-voltage and over-current.
- It can also be used in AC/DC converters, voltage regulators and power management systems.
- MMBZ5246C-G3-08 can be found in personal computers, mobile phones and other low power application systems.
Working Principle
MMBZ5246C-G3-08 is a single-layer Zener diode, which refers to the structure of a semiconductor diode in which a phosphorous-doped poly-silicon layer is added between the n-type and the p-type semiconductor layers. The poly-silicon layer has an accurately adjusted doping which creates the Zener effect.
The Zener effect is an electron tunneling phenomenon that occurs when a Zener diode is assembled in a reverse-biased direct current. When the reverse bias voltage reaches or exceeds the Zener breakdown voltage, electrons move from the n-type layer to the p type-layer due to the increased electric field. Because of the tunneling effect, high reverse current can be achieved, causing the output voltage of the circuit to be clamped to the Zener voltage.
MMBZ5246C-G3-08 has a Zener breakdown voltage of 8V. It also has a nominal current of 200mW and a maximum reverse current of 200mA.
Advantages
MMBZ5246C-G3-08 has several advantages. Its low cost and availability make it suitable for most voltage regulation applications. It is also relatively easy to configure, and can be inserted into most circuits without the need for special components or expertise. In addition, it is small and lightweight, making it a good choice for portable applications.
MMBZ5246C-G3-08 is also versatile, as it can be used in a wide range of applications such as voltage regulation, voltage clamping and static stabilizing circuits. It is also relatively fast, responding quickly to changes in the input current or voltage, making it an ideal choice for applications where response time is of the essence.
Conclusion
MMBZ5246C-G3-08 is a single Zener diode from Diodes Incorporated. It has a wide application field and is suitable for general purpose silicon Zener diode applications. It has a Zener breakdown voltage of 8V, a nominal current of 200mW and a maximum reverse current of 200mA. Its low cost and flexibility make it suitable for a range of applications, from voltage regulation and clamping to static stabilizing circuits.
The specific data is subject to PDF, and the above content is for reference
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