Allicdata Part #: | MMBZ5253B-HE3-18-ND |
Manufacturer Part#: |
MMBZ5253B-HE3-18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 25V 225MW SOT23-3 |
More Detail: | Zener Diode 25V 225mW ±5% Surface Mount SOT-23-3 |
DataSheet: | MMBZ5253B-HE3-18 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01889 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 25V |
Tolerance: | ±5% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 19V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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MMBZ5253B-HE3-18 diodes are a particular type of zener diodes that can be used in many different applications. It is a dual-packaged device, with two leads and a pad on the back side. The diode is encapsulated in a surface-mount package and is characterized by its high voltage and low power rating. The MMBZ5253B-HE3-18 is typically used in circuit designs that require the combination of high-voltage and low-power properties, such as high-voltage switching and distribution, electronics circuits and power supplies.
The working principle of the MMBZ5253B-HE3-18 diode is based on the same principles as any other Zener diode. It utilizes a reverse bias to maintain a voltage across the semiconductor junction. The junction of the diode is slightly reversedbiased and it only becomes more conducting when the voltage across the junction exceeds the reverse-voltage breakdown threshold. When a reverse-bias voltage is applied across the junction, the electrons and the holes start to recombine and this causes a release of energy in the form of light. The power dissipated in the diode is set by the voltage and current values of the reverse bias, and the conduction voltage is dictated by the Zener breakdown voltage.
The MMBZ5253B-HE3-18 is capable of handling high power up to 400 mW, a maximum working voltage of 18 V, and a maximum gauge forward current of 1 A. It has a constant, reverse-bias Zener voltage of 5.3 V, which makes it ideal for designs that require both high-voltage and low-power. The diode also has a low leakage current and low capacitance, making it an excellent choice for high-speed switching applications. Due to its high power and wide operating temperature range, this diode is well-suited for industrialuses in extreme environments.
Applications for the MMBZ5253B-HE3-18
The MMBZ5253B-HE3-18 is ideally suited for use in high-voltage applications, such as power distribution and power converters. It can also be used in switching circuits,AC/DC converters, and pulse-width modulation (PWM) circuits. The diode is also commonly used in automobile electronics and in many industrial applications, especially those that require control of high-voltage signals, such as electronic control systems and switch-mode power supplies.
The MMBZ5253B-HE3-18 is also often used in power semiconductor applications, such as those found in high-frequency radios and televisions, laser diodes, driver circuits, and voltage regulators. Additionally, this diode is commonly used in low-noise, high-precision circuits, as it provides low-noise and stable operation.
Conclusion
The MMBZ5253B-HE3-18 is a useful device for a variety of high-voltage applications. It\'s high power, low capacitance, and its dual-packaging make it an ideal choice for use in power distribution, electronics circuits, and driver circuits, as well as in many industrial and automotive applications. With its low-noise and low EMI characteristics, this diode is well-suited for use in precision circuits and precision controlling applications.
The specific data is subject to PDF, and the above content is for reference
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