MMBZ5253BLT1 Allicdata Electronics

MMBZ5253BLT1 Discrete Semiconductor Products

Allicdata Part #:

MMBZ5253BLT1OSTR-ND

Manufacturer Part#:

MMBZ5253BLT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 25V 225MW SOT23-3
More Detail: Zener Diode 25V 225mW ±5% Surface Mount SOT-23-3 (...
DataSheet: MMBZ5253BLT1 datasheetMMBZ5253BLT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 25V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 19V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MMBZ5253B
Description

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The MMBZ5253BLT1 diode is a silicon avalanche diode device that belongs to the family of single zener diodes. It is a highly-reliable, ultra low forward voltage, low capacitance diode that features a 120 mA zener breakdown voltage at an absolute maximum ratings of 1.3 V. This device is especially suitable for data signal switching and signal conditioning applications, such as RF power supply, cellular communication, and high-frequency signal processing.

The MMBZ5253BLT1 is a three-terminal device, with two terminals for the anode and cathode, and a third terminal for the zener breakdown voltage. It is characterized by its low leakage current, low capacitance and fast switching speed. This diode is available with a range of Vz ratings from 0.12 V to 30 V, and with a maximum continuous current rating of 120 mA.

The MMBZ5253BLT1 diode makes use of an avalanche breakdown process that allows for the rapid and reliable switching of the diode. It works by creating a high reverse-bias voltage at the reverse-biased zener junction. This causes electrons to gain energy and tunnel through the junction, thus increasing the reverse current, until the electric field becomes strong enough to cause a further increase in the tunneling current. This increase in tunneling current results in an avalanche breakdown, and thus, a sudden inflow of current at the zener breakdown voltage (Vz).

The MMBZ5253BLT1 diode is suitable for a wide range of data signal switching and signal conditioning applications, such as RF power supply, cellular communication, and high-frequency signal processing. It can also be used in temperature compensation systems and converters, laser diode drivers, and optical networks.

In summary, the MMBZ5253BLT1 is a single Zener diode device with a maximum continuous current rating of 120 mA and a range of Vz ratings from 0.12 V to 30 V. This device utilizes an avalanche breakdown process and is suitable for a wide range of data signal switching and signal conditioning applications.

The specific data is subject to PDF, and the above content is for reference

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