Allicdata Part #: | MMBZ5253C-E3-08-ND |
Manufacturer Part#: |
MMBZ5253C-E3-08 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 25V 225MW SOT23-3 |
More Detail: | Zener Diode 25V 225mW ±2% Surface Mount SOT-23-3 |
DataSheet: | MMBZ5253C-E3-08 Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.02024 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 25V |
Tolerance: | ±2% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 35 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 19V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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The MMBZ5253C-E3-08 is part of a class of semiconductor devices called diodes, which can be broken down further into the sub-group known as Zener diodes. These devices, of which the MMBZ5253C-E3-08 is one example, are designed to efficiently convert electrical signals, allowing them to be distributed to other components with minimal power loss.
The MMBZ5253C-E3-08 belongs to the single Zener diode family, and is designed for use in voltage regulation and current management. There are two main settings that are identified when using this device - forward bias and reverse bias. In the forward bias setting, the diode works as a normal diode, allowing current to flow in one direction only. In the reverse bias setting, the diode operates in a “Zener Breakdown” mode, allowing current to flow in both directions, with a fixed maximum voltage drop.
The MMBZ5253C-E3-08 can be used for a variety of applications, ranging from DC voltage regulation and stabilising, to signal frequency converting and protection from over-voltage conditions. It is also commonly used in amplifier power supplies, switch mode power supplies and electronic ballasts. This device is rated for anywhere between 4.7V and 200V, with a current rate as high as 1A. It also has a zener voltage tolerance of ±5% at 25°C.
The MMBZ5253C-E3-08 is typically composed of two semiconductor layers - an anode layer and a p-type layer with an intrinsic transition region in between. The intrinsic transition region carries the voltage drop, with the electrons and holes exchanging places at this junction, resulting in the Zener Breakdown effect. This effect is further regulated by the device’s PN junction and its dimensions, allowing more or less voltage drop over time. The device also includes a protective coating, which both stabilises the Zener Breakdown effect, and protects it from physical damage.
The MMBZ5253C-E3-08 is an incredibly versatile device, with applications spanning across many different industries. It is incredibly reliable, and can come in many different sizes, depending on the required application. It is a core component used in electrical and electronic systems, and its practical functionality makes it a popular choice for such applications.
The specific data is subject to PDF, and the above content is for reference
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