MMBZ5267C-E3-08 Allicdata Electronics
Allicdata Part #:

MMBZ5267C-E3-08-ND

Manufacturer Part#:

MMBZ5267C-E3-08

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 75V 225MW SOT23-3
More Detail: Zener Diode 75V 225mW ±2% Surface Mount SOT-23-3
DataSheet: MMBZ5267C-E3-08 datasheetMMBZ5267C-E3-08 Datasheet/PDF
Quantity: 1000
15000 +: $ 0.02024
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 75V
Tolerance: ±2%
Power - Max: 225mW
Impedance (Max) (Zzt): 270 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 56V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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Introduction

MMBZ5267C-E3-08 is a single zener diode which belongs to medium power zener diode family. It is packaged in a standard 8-lead PDIP package and has a wide range of application in various circuit-level protection applications.

Application Field

MMBZ5267C-E3-08 has the following application in various industries:

  • Switching Supplies – clipper circuits and other protection circuits in switching supplies.
  • Automotive Applications – clipper circuits and other protection circuits.
  • Regulated Supplies – regulation circuits and drop out voltage adjustment of regular supplies.
  • Other Consumer and Industrial Electronics – as a clamping device to protect sensitive electronics and to limit overvoltage situations.

Working Principle

MMBZ5267C-E3-08 relies on the principle of avalanche breakdown. This is a phenomenon that occurs when the reverse voltage applied across a lightly doped reverse-biased PN junction diode is increased to a certain threshold value and the diode conductivity increases suddenly, causing a sharp decrease in the reverse-bias voltage. The avalanche breakdown principle is used in zener diodes as they are highly doped, allowing to reduce the breakdown voltage. MMBZ5267C-E3-08 is designed to allow avalanche breakdown, acting as a clamping device over a wide range of voltage and current.

Conclusion

MMBZ5267C-E3-08 is one of the medium power, single zener diode which has wide application field in various industrial and circuit-level protection applications. It is packaged in a standard 8-lead PDIP package and relies on avalanche breakdown principle to act as a clamping device over a wide range of voltage and current.

The specific data is subject to PDF, and the above content is for reference

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