MMG3011NT1 RF/IF and RFID |
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Allicdata Part #: | MMG3011NT1TR-ND |
Manufacturer Part#: |
MMG3011NT1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC AMP RF GP 6000MHZ 5V SOT-89 |
More Detail: | RF Amplifier IC Cellular, PCS, PHS, WLL 0Hz ~ 6GHz... |
DataSheet: | MMG3011NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 0Hz ~ 6GHz |
P1dB: | 15dBm |
Gain: | 15dB |
Noise Figure: | 4.6dB |
RF Type: | Cellular, PCS, PHS, WLL |
Voltage - Supply: | 5V |
Current - Supply: | 41mA |
Test Frequency: | 900MHz |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-4 |
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The MMG3011NT1 is a popular RF amplifier, used worldwide in a variety of applications. The device has been designed with exceptional performance capabilities, making it a highly sought-after component for many radio communications applications.
The MMG3011NT1 is a discrete, high-efficiency, low-noise, wide-band amplifier. It is designed to provide excellent signal and noise performances in the frequency range of DC to 6 GHz. It has high linearity (maximum output IP3 greater than +18 dBm) and excellent power-added efficiency (PAE), which makes it suitable for both multimode and high-speed wireless systems. The amplifier is ideal for many power amplifier applications, including low-noise figure amplifiers, medium-and high-power amplifiers, and power-combining amplifiers.
The amplifier’s gain structure ensures signal boosting and wideband capabilities. It has high efficiency (up to 90%), high 12-dB-gain linearity, and excellent dynamic tracking performance. Its high-performance, high-efficiency design is suited for applications where maximum performance is desired. The amplifier also offers a typical gain phase noise of -75dBc/Hz at 1KHz and a typical gain of 28dB. This makes it ideal for low noise block amplification.
The MMG3011NT1 amplifier has superior thermal properties, thanks to its thermally conductive packages and hermetically sealed design. It also has superior protection features, such as reverse-circuit and short-circuit protection. In addition, its wide supply voltage range of 2.9-9.0V0 provides additional flexibility and convenience.
The working principle of the MMG3011NT1 is simple and straightforward. It is a GaN/SiGe-based transistor, operating in a common-source configuration. When a signal is applied to the input, it is amplified by passing through the transistor, which causes a change in current flow and thus provides the increased voltage output. The transistor’s gate voltage is then adjusted to suit the amplification needs. The result is a high-performance, low-power, wide-band amplifier.
The MMG3011NT1 amplifier is a highly versatile component, suitable for a broad range of applications. It is ideal for wireless base stations, mobile communication systems, antenna systems, and high-speed digital systems. It is also used in power measurements, RF signal sensing, and frequency synthesis. Moreover, its high-power output and low-noise figure make it suitable for automotive and military applications.
In conclusion, the MMG3011NT1 is a highly capable RF amplifier with superior performance capabilities. It is an ideal choice for many radio communications and high-speed digital systems, offering excellent signal and noise performances over a wide range of frequencies. Its wide supply voltage range of 2.9-9.0V0, high 12-dB-gain linearity, and superior thermal properties make it a highly sought-after amplifier for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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