MMG30271BT1 Allicdata Electronics

MMG30271BT1 RF/IF and RFID

Allicdata Part #:

568-13888-6-ND

Manufacturer Part#:

MMG30271BT1

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: HBT GPA/LNA 450-4000 MHZ 27DB
More Detail: RF Amplifier IC SOT-89-3
DataSheet: MMG30271BT1 datasheetMMG30271BT1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: *
Packaging: Digi-Reel® 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF amplifiers are electronic amplifying circuits used to strengthen and amplify radio frequency signals, and MMG30271BT1 is an type of RF Amplifier. This section briefly introduces its application field and working principle.

Application Field

MMG30271BT1 RF Amplifier offers 27dB linear gain and typically 13dBm output IP3, making it applicable in a variety of cellular, WLAN, and GPS architectures. Its broadband coverage from 2.1GHz to 2.5 GHz enhances Gain rejection performance,while a Harmonic rejection of 15dBc and Linear gain of 27dB helps to reduce spurious leakage by minimizing nonlinear distortion. MMG30271BT1 is capable of operating in temperatures ranging from -40C to +85C.

Working Principle

The MMG30271BT1 amplifies RF signals from low-level input power to higher level output power. This way, it increases the antenna power and the signal-to-noise ratio of the system. This increase in performance helps to meet various linearity requirements of the end application. The RF amplifying process involves input reflection coefficient and output reflection coefficient, gain, noise figure and added harmonics.

The MMG30271BT1 utilizes a Single-Ended Class A/AB low noise amplifier with high performance power transistor technology. It has a wide bandwidth coverage from 2.1GHz to 2.5 GHz, with good rejection performance that enhances linearity and reduces spurious leakage. The stage bias, following the gate size optimization, maximizes the gain and signal-to-noise ratio of the amplifier. Additionally, the LNA Offset Pin compensates the bias voltage generated by temperature variations in order to maximize the performance of the amplifier.

By utilizing high gain with low noise figure, power-on current-matching, and a low-cost, compact design, the MMG30271BT1 reports low distortion in both input and output signals. The amplifier offers good gain flatness with its excellent linearity.

The specific data is subject to PDF, and the above content is for reference

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