Allicdata Part #: | 1086-7037-ND |
Manufacturer Part#: |
MP6KE13CAE3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 11.1V 18.2V T-18 |
More Detail: | N/A |
DataSheet: | MP6KE13CAE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 18.2V |
Supplier Device Package: | T-18 |
Package / Case: | T-18, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 33A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 12.4V |
Voltage - Reverse Standoff (Typ): | 11.1V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TVS (Transient Voltage Suppressor) diodes are specialized components which protect electronic circuits from voltage transients. The MP6KE13CAE3 is a particularly useful device if the circuit in question is highly sensitive and a high degree of precision is required. This article will discuss the application field of the MP6KE13CAE3 and its working principle.
The MP6KE13CAE3 can be found in a wide range of applications as it is designed to protect sensitive circuits from destructive voltage transients. These transients can occur due to lightning strikes or other natural or man-made influences. The MP6KE13CAE3 is especially suitable for use in telecoms and networking applications, vehicles, medical devices, and anywhere else where extreme sensitivity is required. The device has a low capacitance of 1.7pF (at 1.5GHz) which makes it suitable for working at frequencies up to response time range.
In terms of its working principle, the MP6KE13CAE3 contains two regions which are doped differently. This creates a semi-conductor layer, which is then coated with an insulated layer of material. Together, these two layers act as the device’s gate layers. When a voltage transient appears, the semi-conductor layer experiences a change in voltage, causing the insulated layer to open and allow a current to flow through the device. This current is then dissipated as heat, protecting the underlying circuit.
In addition to protection from voltage transients, the MP6KE13CAE3 also provides protection against ESD (electro-static discharge). When subjected to a high voltage, the device begins to conduct electricity, but limits the current to a safe level, protecting sensitive components from damage. The device also features an enhanced ESD immunity, boasting a surge rating of up to 8.0kV.
The MP6KE13CAE3 is a highly specialized device which provides maximum protection from voltage transients and ESD, making it well suited to extremely sensitive and high-precision circuits. As such, it finds application in a wide range of sectors, with uses in telecoms and networking, vehicles, medical devices, and much more. Thanks to its two-layer semi-conductor/insulated gate design, the device is able to limit the current of a voltage transient to a safe level, preventing damage to sensitive components.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MP6K11TCR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 3.5A MPT... |
MP6K12TCR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 5A MPT6M... |
MP6K13TCR | ROHM Semicon... | -- | 1000 | MOSFET 2N-CH 30V 6A MPT6M... |
MP6K14TCR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 8A MPT6M... |
MP6K31TCR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2A MPT6M... |
MP6K31TR | ROHM Semicon... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 2A MPT6M... |
MP6KE8.2AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V T-1... |
MP6KE100A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MP6KE100AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MP6KE100CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MP6KE100CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 85.5V 137V T-18 |
MP6KE10A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MP6KE10AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MP6KE10CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MP6KE10CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 8.55V 14.5V T-1... |
MP6KE110A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MP6KE110AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MP6KE110CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MP6KE110CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 94V 152V T-18 |
MP6KE11A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MP6KE11AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MP6KE11CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MP6KE11CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.4V 15.6V T-18 |
MP6KE120A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MP6KE120AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MP6KE120CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MP6KE120CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 102V 165V T-18 |
MP6KE12A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MP6KE12AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MP6KE12CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MP6KE12CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 10.2V 16.7V T-1... |
MP6KE130A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MP6KE130AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MP6KE130CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MP6KE130CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 111V 179V T-18 |
MP6KE13A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MP6KE13AE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MP6KE13CA | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MP6KE13CAE3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 11.1V 18.2V T-1... |
MP6KE150A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 128V 207V T-18 |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL