MPF960 Allicdata Electronics
Allicdata Part #:

MPF960OS-ND

Manufacturer Part#:

MPF960

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 2A TO-92
More Detail: N-Channel 60V 2A (Ta) 1W (Ta) Through Hole TO-92-3
DataSheet: MPF960 datasheetMPF960 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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A Metal-Oxide-Semiconductor Field Effect Transistor, or MOSFET, is a type of field-effect transistor (FET) that has wide applications in various areas, such as power switching, sensing and communications. The MPF960 is a type of MOSFET specifically designed for high frequency and high speed switching.

Fundamentally, the operation of a MOSFET is easy to understand. In a FET, the current is controlled by an electrode or “gate” that allows or blocks the current passing through the channel between the source and drain. This gate is located between the source and drain and is insulated from them by a thin film of metal-oxide. To turn on the FET, the voltage at the gate is increased, thereby causing a channel of electrons to begin flowing between the source and the drain.

The MPF960 is a specifically designed MOSFET which provides very low on-resistance, low switching losses, and fast switching times. This makes it ideal for use in high frequency, power handling and communications applications.

The MPF960 consists of a P-channel, depletion-type MOSFET with a silicon N-channel, enhancement-type FET formed on the same chip. The MPF960 has a low on-resistance, which can be adjusted to the desired value by using a trim resistor. The lower this on-resistance is, the faster the switching time of the MOSFET.

The MPF960 has two ports, the gate and the source-drain. The gate is the controlling pin of the MOSFET, which provides the mechanism for controlling the current through the device. The source-drain is the load, or output port of the device, which provides the current path for the load. When a positive voltage is applied to the gate, it allows current to flow from the source to the drain, and vice versa when a negative voltage is applied.

The working of the MPF960 depends on the mode of operation. In enhancement mode, the MPF960 behaves like an open-drain device, meaning that it only needs a negative voltage on the gate to turn on. This makes it ideal for sensing and detecting applications, where it can be used to detect a rise or fall in voltage or current with a high degree of accuracy. In depletion mode, a positive voltage is applied to the gate to turn on the device.

The MPF960 can also be used in switching applications, where it can be used to switch high frequency signals with minimal power loss. It can also be used in applications such as power supply conversion, switching power amplifiers, radio frequency signal switching, and communications applications.

In conclusion, the MPF960 MOSFET is a type of FET which is specially designed to provide low noise and fast switching times. It is ideal for high speed switching and sensing applications, as well as for sourcing and switching high frequency signals in communications applications.

The specific data is subject to PDF, and the above content is for reference

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