MPS2222ARLRAG Allicdata Electronics
Allicdata Part #:

MPS2222ARLRAGOSTR-ND

Manufacturer Part#:

MPS2222ARLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 40V 0.6A TO92
More Detail: Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625m...
DataSheet: MPS2222ARLRAG datasheetMPS2222ARLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 625mW
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS2222
Description

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A MPS2222ARLRAG is a single, bipolar junction transistor (BJT) designed for general-purpose switching and amplifying applications. In this article we will discuss the application field and working principle of this transistor.

The MPS2222ARLRAG is a PNP type transistor and is available as a 2-pin plastic-encapsulated package (with symbol TO-92). It is designed for use in audio amplifiers, sound equipment, voltage regulators, logic circuits, and general-purpose switching.

The MPS2222ARLRAG has a current gain (β) of 20 to 60, along with an integrated resistive load of 0.6V. It can handle up to 1.5amps of collector current (Ic) and has an off-state breakout voltage of 50V. The transistor is also equipped with a collector-emitter breakdown voltage (BVceo) of 45V.

The working principle of a bipolar junction transistor (BJT) can be explained by considering it as two diodes connected back-to-back. The BJT consists of three regions, called emitter-base, base-collector and collector-emitter junctions. When a positive bias voltage is applied to the base-collector junction, electrons flow from the emitter to the base and holes flow from the base to the collector. This process is amplified by the current gain (β) of the transistor and results in an amplified current at the collector terminal. The base-emitter junction also plays a crucial role, as it determines the amplification factor of the transistor.

When a small current flows through the base-emitter junction, the collector current is amplified to a much larger magnitude- this is the operation of the transistor in its active region. Similarly, when the base-emitter junction is turned off, the current flow is stopped and the transistor moves into its cut-off region. With a large voltage applied between the collector and emitter, electrons are rapidly attracted towards the collector and the transistor moves into its saturation region.

The MPS2222ARLRAG is an excellent choice for a wide range of applications, as it is highly reliable and has a wide range of current gain, voltage and temperature ratings. It is also available with additional features, such as collector open-emitter protection, rugged construction and low-power consumption.

In conclusion, the MPS2222ARLRAG is an excellent choice for a wide range of applications, from audio amplifiers and sound equipment, to voltage regulators and general-purpose switching. Its operating principles and features make it highly reliable and suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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