Allicdata Part #: | MPS2222RLRMG-ND |
Manufacturer Part#: |
MPS2222RLRMG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 0.6A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 600mA 250MHz 625m... |
DataSheet: | MPS2222RLRMG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS2222 |
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The MPS2222RLRMG is a high performance, individual Darlington transistor that is commonly used in a variety of consumer electronics. It is a high gain, medium power bipolar junction transistor (BJT) that is constructed using silicon, with three terminals (the base, collector, and emitter). This article will provide an overview of the application field and working principle of the MPS2222RLRMG.
Application Field of the MPS2222RLRMG
The MPS2222RLRMG is primarily used in medium power amplification and switching applications, such as small power motor control, telecommunication circuits, and audio applications. As a high gain Darlington transistor, it is robust and provides a good power over temperature performance. Additionally, it features a low turn-on voltage and high-current gain, which make it ideal for applications involving fast switching.
Working Principle of the MPS2222RLRMG
The working principle of the MPS2222RLRMG can be explained by looking at how the device functions. As most transistors, the MPS2222RLRMG relies on the flow of electrons in a semiconductor material. This is achieved by using a combination of three different elements: the base–collector, the base–emitter, and the collector–emitter junction.
The base–collector junction is created when an electrical potential is applied between the base and collector terminal of the transistor. This forward biasing as it is known, causes an electrical current to flow across the junction. This current is then amplified and diverted through the collector terminal, thereby providing an amplified signal at the collector.
The base–emitter junction is created when an electrical potential is applied between the base and emitter terminals. This reverse biasing causes a current known as the injection current flow from the emitter to the base. This injection current is then amplified by the collector–emitter junction.
The collector–emitter junction is created when an electrical potential is applied between the collector and emitter terminals of the transistor. This forward biasing causes an electrical current to flow from the collector to the emitter, thereby amplifying the signal from the collector.
In conclusion, the MPS2222RLRMG is a high performance, individual Darlington transistor that is commonly used in a variety of consumer electronics. It is a reliable and robust transistor with a good power over temperature performance, low turn-on voltage, and high-current gain, making it ideal for applications requiring fast switching.
The specific data is subject to PDF, and the above content is for reference
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