Allicdata Part #: | MPS2369OS-ND |
Manufacturer Part#: |
MPS2369 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 15V 0.2A TO92 |
More Detail: | Bipolar (BJT) Transistor NPN 15V 200mA 625mW Thro... |
DataSheet: | MPS2369 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 400nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPS2369 |
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The MPS2369 is a single-channel device, specifically, a Bipolar Junction Transistor (BJT) commonly used in a wide array of modern electronics. It is a type of NPN transistor, in which the emitter is connected to the power supply, the collector is connected to the load, and the base is driven by a signal. The MPS2369 stands out from its counterparts because of its superior performance and cost-efficiency.
At the heart of the MPS2369 is the BJT. This type of transistor is also known as a BJT and is composed of two p-n junctions connected in a sandwich formation. This connection allows for the transistor to control large amounts of current between two terminals by applying a small voltage across their base-emitter junction. The BJT is a three-terminal device, with an emitter, collector, and base. When a voltage difference is applied between the base and the emitter, a current flows from the base to the emitter, which allows current to be controlled from the collector to the emitter. This current can be either an AC or DC current. The transistor amplifies the current flowing through it.
The MPS2369 transistor is a low-power, high-current BJT, which makes it ideal for a wide range of applications, such as high-current switching, precision current biasing, audio amplification, and audio power amplifier stages. It is also often used in radio and communication infrastructure applications, as it is capable of handling high voltage and high current. The low-power feature of the MPS2369 makes it particularly attractive for high-performance applications, as it is more efficient than many competing types of transistors and it allows for a reduced power dissipation in the circuit.
The MPS2369 transistor is capable of handling high currents, up to 1A and has a collector-emitter voltage of up to 30V, making it well-suited for a variety of applications. The device is designed to operate under a wide range of temperatures, from 0-125 °C, which makes it suitable for use in a wide variety of environments. The transistor has a reverse leakage current of 10mA and a low input capacitance of 10-25pF. In addition, the MPS2369 has low thermal impedance, which helps to reduce power dissipation.
Despite its small overall size, the MPS2369 transistor is capable of providing excellent performance. The device has fast switching times, which makes it especially useful in audio, telecom, and other high performance applications. The MPS2369 also has a low on-resistance and is capable of providing high current gains. The device is also highly reliable, featuring a robust dielectric construction and a wide range of safety features, such as insulation and thermo-protection. The MPS2369 also has an excellent signal-to-noise ratio, which makes it ideal for audio amplifiers.
The working principle of the MPS2369 relates to its structure and design. The device consists of two p-n junctions that are connected in a sandwich configuration, allowing the transistor to control high amounts of current by applying a small voltage across its base-emitter junction. When a small base current is applied, the transistor is turned on and a large current is able to flow through it, depending on the resistance of the load. If the resistance of the load is high, a higher base current must be applied in order to increase the current flow. When a large base current is applied, the transistor is turned off and the current flow is abruptly stopped. In this way, the transistor is able to control the current flow through the collector-emitter junction.
The MPS2369 transistor is a versatile device that can be used in a wide range of applications. It is a low-power, high-current BJT, making it ideal for high-performance applications, such as audio and communications. It is also highly reliable with a robust dielectric construction and safety features. The device is capable of providing fast switching times and a large current gain, making it ideal for radio and communication infrastructure. The device has an excellent signal-to-noise ratio and offers high levels of performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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