MPSA29G Allicdata Electronics
Allicdata Part #:

MPSA29GOS-ND

Manufacturer Part#:

MPSA29G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 500...
DataSheet: MPSA29G datasheetMPSA29G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: MPSA29
Description

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The MPSA29G is a high-performance, low-noise device manufactured by ON Semiconductor and is typically used in radio frequency and low-noise amplifier applications. The MPSA29G is a bipolar junction transistor (BJT) which is a three-terminal solid-state device consisting of either a PNP or an NPN transistor in its active region. The device can be used in either the common-emitter (CE) configuration or in the common-base (CB) configuration.

The MPSA29G is designed for low-noise applications, making it ideal for use in radio frequency amplification. It has a gain of up to 250 at 400MHz and a noise figure of 1dB at 200MHz. The transistor is designed to offer excellent linearity and low distortion. It features a high-frequency operating range up to 600MHz and operating temperature ranges of -65°C to +150°C.

The working principle of the MPSA29G is based on the electrical properties of two different types of semiconductor material. It involves two regions of semiconductor material, the base and the emitter, that are separated by an insulating material called an oxide layer. When an electric current is applied to the base region, it creates an electric field that attracts electrons from the emitter region and allows a current to flow between the two regions. This is called minority carrier injection, as the electrodes are injected with the opposite type of charge carriers (electrons or holes). Once the current has established a sufficient level, minority carriers become majority carriers and the device saturates, allowing full current flow between the two regions. The result is an amplified boos to the input signal.

In addition to being used in radio frequency applications, the MPSA29G can also be used in a wide range of other applications including low frequency amplifiers, bias circuits, modulation circuits, and audio-frequency power amplifiers. The device is also suitable for use in automotive, industrial, and medical applications. The MPSA29G offers reliable performance and is easy to use, making it the ideal choice for a wide range of applications.

In conclusion, the MPSA29G is a high-performance, low-noise device that is ideal for use in radio frequency and low-noise amplifiers and a wide range of other applications. The device is based on the principles of minority carrier injection, which allow a current to flow between two regions, resulting in an amplified boost to the input signal. This makes the MPSA29G an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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