| Allicdata Part #: | MPSA29GOS-ND |
| Manufacturer Part#: |
MPSA29G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN DARL 100V 0.5A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 500... |
| DataSheet: | MPSA29G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Darlington |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max): | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
| Power - Max: | 625mW |
| Frequency - Transition: | 200MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | MPSA29 |
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The MPSA29G is a high-performance, low-noise device manufactured by ON Semiconductor and is typically used in radio frequency and low-noise amplifier applications. The MPSA29G is a bipolar junction transistor (BJT) which is a three-terminal solid-state device consisting of either a PNP or an NPN transistor in its active region. The device can be used in either the common-emitter (CE) configuration or in the common-base (CB) configuration.
The MPSA29G is designed for low-noise applications, making it ideal for use in radio frequency amplification. It has a gain of up to 250 at 400MHz and a noise figure of 1dB at 200MHz. The transistor is designed to offer excellent linearity and low distortion. It features a high-frequency operating range up to 600MHz and operating temperature ranges of -65°C to +150°C.
The working principle of the MPSA29G is based on the electrical properties of two different types of semiconductor material. It involves two regions of semiconductor material, the base and the emitter, that are separated by an insulating material called an oxide layer. When an electric current is applied to the base region, it creates an electric field that attracts electrons from the emitter region and allows a current to flow between the two regions. This is called minority carrier injection, as the electrodes are injected with the opposite type of charge carriers (electrons or holes). Once the current has established a sufficient level, minority carriers become majority carriers and the device saturates, allowing full current flow between the two regions. The result is an amplified boos to the input signal.
In addition to being used in radio frequency applications, the MPSA29G can also be used in a wide range of other applications including low frequency amplifiers, bias circuits, modulation circuits, and audio-frequency power amplifiers. The device is also suitable for use in automotive, industrial, and medical applications. The MPSA29G offers reliable performance and is easy to use, making it the ideal choice for a wide range of applications.
In conclusion, the MPSA29G is a high-performance, low-noise device that is ideal for use in radio frequency and low-noise amplifiers and a wide range of other applications. The device is based on the principles of minority carrier injection, which allow a current to flow between two regions, resulting in an amplified boost to the input signal. This makes the MPSA29G an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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| MPSA20 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 40V 0.1A TO92Bi... |
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| MPSA05RLRMG | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN 60V 0.5A TO-92B... |
| MPSA14RLRP | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 30V 0.5A T... |
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| MPSA12RLRPG | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 20V TO-92B... |
| MPSA13RLRP | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 30V 0.5A T... |
| MPSA56,116 | NXP USA Inc | 0.0 $ | 1000 | TRANS PNP 80V 0.5A SOT54B... |
| MPSA65 | ON Semicondu... | 0.0 $ | 1000 | TRANS PNP DARL 30V 1.2A T... |
| MPSA05RLRAG | ON Semicondu... | -- | 1000 | TRANS NPN 60V 0.5A TO92Bi... |
| MPSA06,116 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 80V 0.5A SOT54B... |
| MPSA28 | ON Semicondu... | 0.0 $ | 9000 | TRANS NPN DARL 80V 0.5A T... |
| MPSA14 | ON Semicondu... | 0.0 $ | 1000 | TRANS NPN DARL 30V 0.5A T... |
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MPSA29G Datasheet/PDF