Allicdata Part #: | MPSA13RLRM-ND |
Manufacturer Part#: |
MPSA13RLRM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 30V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 30V 500m... |
DataSheet: | MPSA13RLRM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 100µA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10000 @ 100mA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 125MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSA13 |
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The MPSA13RLRM is a single bipolar junction transistor (BJT) with a variety of uses in electrical and electronic applications. It is an NPN silicon device that functions as a low-power switch. This type of device has an emitter, base and collector, with the emitter having negative DC voltages and the collector having positive DC voltages. The base usually has a small DC voltage with respect to the emitter.
The MPSA13RLRM device consists of a very thin junction between two different semiconductor materials -- a P-type material, where electrons are the majority carriers, and an N-type material, where holes are the majority carriers. This type of device was developed for its higher current capabilities, faster switching time and a greater output current. It is commonly used in applications such as portable radios and other consumer electronics, and it can be found in a large number of small- and medium-sized industrial electronics.
The operation of the MPSA13RLRM is based on the fact that it is physically structured to allow current to pass through it when a sufficient voltage is applied. This is done by having three layers of semiconductor material, with one layer forming the base, another the emitter, and the other the collector. When a small voltage is applied to the base, it allows a large current to pass though the device, since the base layer has a high resistance and therefore presents a low-current path to the current flowing through the device. This current is then able to pass through the collector and emitter layers and into the circuit.
The MPSA13RLRM is designed to be used in a variety of applications such as amplifiers, switches, audio devices and video devices. It is a low-power transistor that can be used for short-term bursts of power or for providing current to a circuit for longer periods of time. Additionally, it has a high switching speed and can quickly switch from an on-state to an off-state. Its small size and low power consumption also make it suitable for use in applications where space is at a premium.
The MPSA13RLRM can also be used in various digital switching applications. In this application, the device is used to detect a low digital input, such as a logic 0, and switch to a high digital output, such as a logic 1. This type of switching is often used in control systems and computer systems in order to control external devices. By sensing a low input, the transistor can trigger a higher current output that can be used to control an external device or circuit.
Overall, the MPSA13RLRM is a reliable, low-power device that is used in a wide variety of applications. With its ability to quickly switch between an on-state and off-state, it is especially suitable for digital switching applications. In addition, its small size and low power consumption make it a great option for applications where space is at a premium. As such, the MPSA13RLRM continues to be a popular choice in electronic and electrical applications.
The specific data is subject to PDF, and the above content is for reference
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